---
title: "ROHM SiC components enter AI server power systems to seize 800V HVDC business opportunities"
type: "News"
locale: "en"
url: "https://longbridge.com/en/news/289671073.md"
description: "ROHM announced that its 750V silicon carbide MOSFET products have been adopted by AI server backup battery units, applied in the new generation ±400V power architecture. The component features low loss and high-temperature resistance, making it suitable for high power density environments. As AI data centers evolve towards 800V HVDC architecture, ROHM pointed out that this product can still meet the design requirements of next-generation systems, highlighting the importance of SiC in enhancing energy efficiency and the supply chain"
datetime: "2026-06-13T17:00:16.000Z"
locales:
  - [zh-CN](https://longbridge.com/zh-CN/news/289671073.md)
  - [en](https://longbridge.com/en/news/289671073.md)
  - [zh-HK](https://longbridge.com/zh-HK/news/289671073.md)
---

# ROHM SiC components enter AI server power systems to seize 800V HVDC business opportunities

![Reuters](https://imageproxy.pbkrs.com/https://cimg.cnyes.cool/prod/news/6498576/o/8593eee4870b7c3b5ae07a61543abeb4.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg)

On June 14, 2026 (You Analysis / Industry Data Center Report) — With the rapid increase in electricity demand for data centers driven by generative AI, power architectures are also evolving towards higher voltage and greater efficiency. Japanese power semiconductor manufacturer ROHM (6963-JP) announced that its 750V silicon carbide (SiC) MOSFET products have been adopted for AI server backup battery units (BBU, Backup Battery Unit), applied in the next generation of AI server power systems.

In recent years, as GPU computing performance continues to improve, electricity consumption in data centers has also increased. To reduce energy loss during power transmission, the industry is accelerating the adoption of high-voltage direct current transmission (HVDC) architectures, gradually shifting from traditional power supply systems to ±400V power designs.

In this architecture, BBU and capacitor storage units (CU) have become important backup power supply devices, providing immediate power during power outages or momentary interruptions, preventing AI servers from halting operations.

The product introduced by ROHM is the 750V SiC MOSFET "SCT4013DLL," configured in the power supply module of the AI server ±400V power architecture. The company stated that SiC materials possess low loss and high-temperature resistance characteristics, with a maximum junction temperature (Tj) of up to 175°C, allowing stable operation even in high voltage and high power density environments.

As AI server power systems continue to upgrade, the market has begun to layout the next generation of 800V direct current power architectures. ROHM pointed out that in the 800V power system, the operating voltage of the BBU battery pack is about 560V, so the rated withstand voltage of 750V SiC MOSFET can still meet the system design requirements and provide sufficient safety margins.

Compared to traditional silicon-based power components, SiC power semiconductors offer higher conversion efficiency, lower conduction losses, and better high-temperature capabilities, making them particularly suitable for high power density power systems. As the demand for AI servers, data centers, and high-performance computing devices continues to rise, the importance of SiC components in the power supply chain is also increasing.

In addition to SiC, gallium nitride (GaN) power components are gradually gaining market attention, becoming one of the important technological directions for improving energy efficiency in data centers. The market generally believes that high-efficiency power semiconductors will become indispensable core components for upgrading AI infrastructure in the future ※ This article is authorized for reprint by "You Analyze," original source: Original Link

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