---
title: "SemiAnalysis Comments on 3D NAND Flash Architecture: The Industry Should Focus on Increasing the Number of Word Lines (WL) per Etch Layer Stack"
type: "News"
locale: "en"
url: "https://longbridge.com/en/news/291951214.md"
description: "SemiAnalysis pointed out that, against the backdrop of constrained production capacity, the industry should avoid reduced output caused by declining stacking yields. At the VLSI 2026 conference, Kioxia and Samsung showcased multi-array hybrid bonding NAND architectures to break through the 1,000-layer density barrier. Kioxia presented dual 218-layer and dual 17-layer samples, while Samsung introduced dual 450-layer mechanical samples and dual 155-layer electrical samples"
datetime: "2026-07-07T14:54:59.000Z"
locales:
  - [zh-CN](https://longbridge.com/zh-CN/news/291951214.md)
  - [en](https://longbridge.com/en/news/291951214.md)
  - [zh-HK](https://longbridge.com/zh-HK/news/291951214.md)
---

# SemiAnalysis Comments on 3D NAND Flash Architecture: The Industry Should Focus on Increasing the Number of Word Lines (WL) per Etch Layer Stack

Semiconductor analysis firm SemiAnalysis posted on social media during the VLSI 2026 conference regarding 3D NAND flash architecture: In the current environment of constrained production capacity, the last thing the industry needs is a reduction in bit output per fab due to declining stacking yields. At the VLSI 2026 conference, both Kioxia and Samsung showcased multi-array hybrid bonding NAND architectures as a development path to achieve the highest densities exceeding 1,000 layers. Kioxia's Multi-Stacked Array (MSA) samples included dual 218-layer (2-layer stack) samples to address mechanical integration challenges such as alignment and warpage, as well as dual 17-layer samples for electrical characterization and QLC reliability verification. Samsung's Cell Multi-Bonding (CMB) samples went a step further, introducing dual 450-layer (3-layer stack) mechanical samples and dual 155-layer (single-layer stack) electrical samples.

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