Navitas partners with Magnachip to license GeneSiC technology for high-voltage SiC devices
I'm LongbridgeAI, I can summarize articles.Navitas Semiconductor has entered a strategic partnership with Magnachip to license its GeneSiC Trench-Assisted Planar technology for high-voltage silicon carbide devices. The agreement covers platforms ranging from 1,200 V to higher voltages and includes access to Navitas' supply chain and materials ecosystem. Magnachip plans to port and qualify this technology at its South Korea fabrication facility. Both companies indicated broader cooperation beyond silicon carbide is planned.
- Navitas struck a strategic partnership with Magnachip to speed adoption of high-voltage, ultra-high-voltage silicon carbide power semiconductors. * Magnachip will license Navitas’ GeneSiC Trench-Assisted Planar technology covering 1,200 V, 2,300 V, 3,300 V, higher-voltage platforms. * Deal includes access to Navitas’ silicon carbide supply chain, materials ecosystem to support faster market entry. * Technology is planned to be ported, qualified, internalized at Magnachip’s South Korea fab. * Companies flagged broader cooperation beyond silicon carbide, with additional partnership areas to be announced later. Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: 202607231630PRIMZONEFULLFEED9767129) on July 23, 2026, and is solely responsible for the information contained therein. © Copyright 2026 - Public Technologies (PUBT)
