<p>新聞：LED</p>
<p>改進紅色 LED 的氮化鎵圖案化</p>
<p>中國合肥工業大學和南京大學報告了使用氮化鎵（GaN）模板圖案化作為增強高銦含量量子阱（QWs）中紅光發射的手段 [Kun Xing et al, IEEE Transactions On Electron Devices,2025 年 11 月 18 日在線發表]。</p>
<p>研究人員發現，最佳模板區域是一個 300μm x 300μm 的正方形，在其上生長 LED 材料並形成器件。</p>
<p>團隊報告稱：“在最佳模板上製造的紅色迷你 LED 在 1A/cm2 時表現出 634.0nm 的峯值發射波長，與在未圖案化模板上生長的 LED 相比，峯值外部量子效率（EQE）提高了 57%。”</p>
<p>紅色迷你 LED 和微型 LED 正在開發用於微型顯示器和其他顯示器。目前，標準紅光發射半導體如鋁銦鎵磷（AlInGaP）和 InGaN 的效率都較低。小型鋁銦鎵磷在側壁處的高表面複合速率導致效率降低。對於 InGaN，這個問題相對較小。相反，仍然存在高缺陷水平和其他問題，導致無法有效地摻入足夠的銦以實現穩定的紅光發射。</p>
<p>研究人員描述了模板尺寸對生長在其上的 GaN 材料的影響：“當週圍材料被蝕刻掉後，外部晶格自由向邊緣擴展時，晶格內的壓應力得到緩解，誘導內部晶格結構的橫向鬆弛。因此，圖案化模板的大小預計會通過影響鬆弛程度來影響 GaN 層內的壓應變。”</p>
<p>圖案化是在圖案化藍寶石基板（PSS）上的 GaN 模板層中進行的，使用感應耦合等離子體（ICP）通過 SiO2 掩膜進行蝕刻（圖 1）。圖案間距為 20μm，蝕刻深度為 3μm。圖案化以邊長達 500μm 的正方形進行。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f1.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f1.jpg"/></p>
<p><em>圖 1：模板工藝示意圖：（a）PSS 上的 GaN；（b）二氧化硅（SiO2）掩膜的沉積；（c）掩膜的感應耦合等離子體（ICP）蝕刻；（d）ICP 蝕刻以暴露 GaN；（e）外延未摻雜（u-）GaN 層；（f）外延 n-GaN 層。（g）在同一外延晶圓上製造的不同尺寸的 GaN 模板。（h）基於 InGaN 的紅色迷你 LED 的完整結構。（i）紅光發射量子阱（QW）結構。（j）橫向鬆弛的 GaN 層的原子結構。</em></p>
<p>圖案化模板用於金屬有機外延紅色 LED 結構，具有 30% 銦含量的三重 InGaN 量子阱。器件尺寸為 90μm x 150μm，採用氧化銦錫（ITO）電流擴散層製造。金屬接觸為鉻/鎳/金。</p>
<p>測試的 LED 來自晶圓的中央區域，以最小化晶圓邊緣生長問題。LED 本身是在每個 GaN 塊的中心附近製造的，遠離蝕刻邊界。此外，參考器件（LED E）是在同一外延爐中處理的未圖案化模板材料上製造的。</p>
<p>對 X 射線測量的倒易空間映射分析顯示，較小的模板尺寸促進了橫向應變鬆弛。螺旋和邊緣位錯密度是根據 X 射線搖擺曲線行為估算的。螺旋位錯的密度比邊緣缺陷低一個數量級。</p>
<p>在邊長為 200μm（LED D）的最小模板正方形區域中發現的最低螺旋位錯密度為 1.63x107/cm2。邊緣缺陷在稍大一些的 300μm 正方形（LED C）中最低：3.06x108/cm2。研究人員可能將最小圖案化模板區域邊緣缺陷的增加歸因於 “在蝕刻過程中側壁缺陷的出現，這為邊緣位錯的生成和傳播創造了路徑。”</p>
<p><em>表 1：峯值波長藍移及 10A/cm2 注入時的值。</em></p>
<table>
<thead>
<tr>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
</tr>
</thead>
<tbody>
<tr>
<td>LED</td>
<td>A</td>
<td>B</td>
<td>C</td>
<td>D</td>
<td>E</td>
</tr>
<tr>
<td>模板</td>
<td>500μm</td>
<td>400μm</td>
<td>300μm</td>
<td>200μm</td>
<td>N/A</td>
</tr>
<tr>
<td>藍移 0.1–10A/cm2</td>
<td>45nm</td>
<td>44nm</td>
<td>40nm</td>
<td>38nm</td>
<td>60nm</td>
</tr>
<tr>
<td>峯值波長 10A/cm2</td>
<td>610.3nm</td>
<td>610.4nm</td>
<td>613.6nm</td>
<td>618.8nm</td>
<td></td>
</tr>
</tbody>
</table>
<p>電致發光（EL）研究表明，隨着電流注入的增加，光譜的藍移減少（表 1）。在較小尺寸模板上的 LED 中，藍移也有所減小。這種藍移效應通常歸因於量子限制斯塔克效應（QCSE），其中晶格應變和不同材料的電荷極化導致量子阱中的電場，抑制電子和空穴的輻射覆合，降低光輸出，特別是在長波長器件中。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f2.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f2.jpg"/></p>
<p><em>圖 2：在 GaN 模板 A–E 上生長的原型紅色 InGaN 基迷你 LED 的電流密度依賴性。（a）峯值波長。（b）相對光強度。（c）歸一化的 EQE。（d）LED A–E 的電流–電壓曲線。</em></p>
<p>研究人員認為，隨着模板尺寸的減小，增強的鬆弛增加了量子阱中銦的摻入，使得 LED D 在更高電流注入下保持更長的峯值波長（圖 2）。</p>
<p>就發射強度而言，LED C 提供了更好的性能。研究人員認為 LED D 的退化是由於 “晶體質量下降，較高的銦比例通常導致缺陷密度增加（例如，形成以緩解應變的 V 缺陷或位錯）”。</p>
<p>LED C 的外部量子效率（EQE）表現優於其他 LED。參考 LED E 的 EQE 峯值較低，但下降緩慢，在 10A/cm2 時幾乎與 LED C 的 EQE 相匹配。</p>
<p>團隊評論道：“我們將 LED E 的小衰減歸因於其相對於有圖案的 LED 更高的位錯和非輻射覆閤中心的密度（由於缺乏應變釋放圖案），這導致即使在低和中等電流下也會發生強烈的 SRH 複合。因此，LED E 的外量子效率在低注入水平下已經受到缺陷相關的 SRH 複合的抑制。隨着電流密度的增加，SRH 複合在高電流下變得飽和，剩餘的效率衰減則主要由 Auger 複合和泄漏機制主導，這在所有 LED 中都是常見的。”</p>
<p>紅色 LED GaN InGaN AlInGaP</p>
<p>https://doi.org/10.1109/TED.2025.3630618</p>
<p><em>作者 Mike Cooke 是一位自由職業的科技記者，自 1997 年以來一直在半導體和先進技術領域工作。</em></p>

旭明光電

<p>合肥工業大學和南京大學的研究人員通過使用氮化鎵（GaN）模板圖案化增強了 LED 中的紅光發射。研究發現，最佳模板尺寸為 300μm x 300μm，外部量子效率提高了 57%。這一進展解決了紅色迷你 LED 和微型 LED 的效率問題，這對微型顯示器至關重要。研究強調了模板尺寸對晶格應變和銦摻入的影響，較小的模板減少了藍移效應並提升了性能</p>

<p>News: LEDs</p>
<div class="lb-trans"><p>新聞：LED</p>
</div><p>Patterning GaN for improved red LEDs</p>
<div class="lb-trans"><p>改進紅色 LED 的氮化鎵圖案化</p>
</div><p>Hefei University of Technology and Nanjing University in China have reported on the use of gallium nitride (GaN) template patterning as a means to enhance red light emission from high-indium-content quantum wells (QWs) in light-emitting diodes (LEDs) [Kun Xing et al, IEEE Transactions On Electron Devices, published online 18 November 2025].</p>
<div class="lb-trans"><p>中國合肥工業大學和南京大學報告了使用氮化鎵（GaN）模板圖案化作為增強高銦含量量子阱（QWs）中紅光發射的手段 [Kun Xing et al, IEEE Transactions On Electron Devices,2025 年 11 月 18 日在線發表]。</p>
</div><p>The researchers found that the optimal template region was a 300μm x 300μm square on which the LED material was grown and then formed into devices.</p>
<div class="lb-trans"><p>研究人員發現，最佳模板區域是一個 300μm x 300μm 的正方形，在其上生長 LED 材料並形成器件。</p>
</div><p>The team reports: “A red mini-LED fabricated on the optimal template exhibited a peak emission wavelength of 634.0nm at 1A/cm2, with the peak EQE [external quantum efficiency] enhanced by 57% compared to the LED grown on the unpatterned template.”</p>
<div class="lb-trans"><p>團隊報告稱：“在最佳模板上製造的紅色迷你 LED 在 1A/cm2 時表現出 634.0nm 的峯值發射波長，與在未圖案化模板上生長的 LED 相比，峯值外部量子效率（EQE）提高了 57%。”</p>
</div><p>Red mini-LEDs and micro-LEDs are being developed for micro-displays and other displays. At present the efficiencies are low, both for standard red-emitting semiconductors such as aluminium indium gallium phosphide (AlInGaP), and InGaN. AlInGaP in small form factors suffers from high surface recombination rates at sidewalls, killing efficiency. For InGaN, this has been found to be much less of a problem. Rather, it is still the high defect levels and other problems of incorporating sufficient indium to enable stable red light emission.</p>
<div class="lb-trans"><p>紅色迷你 LED 和微型 LED 正在開發用於微型顯示器和其他顯示器。目前，標準紅光發射半導體如鋁銦鎵磷（AlInGaP）和 InGaN 的效率都較低。小型鋁銦鎵磷在側壁處的高表面複合速率導致效率降低。對於 InGaN，這個問題相對較小。相反，仍然存在高缺陷水平和其他問題，導致無法有效地摻入足夠的銦以實現穩定的紅光發射。</p>
</div><p>The researchers describe the effect of the template size on the GaN material grown on top: “The compressive stress within the lattice is relieved when the external lattice expands freely toward the periphery after the material surrounding the template has been etched away, inducing lateral relaxation of the internal lattice structure. Hence, the size of the patterned template is expected to influence the compressive strain within the GaN layer by affecting the degree of relaxation.”</p>
<div class="lb-trans"><p>研究人員描述了模板尺寸對生長在其上的 GaN 材料的影響：“當週圍材料被蝕刻掉後，外部晶格自由向邊緣擴展時，晶格內的壓應力得到緩解，誘導內部晶格結構的橫向鬆弛。因此，圖案化模板的大小預計會通過影響鬆弛程度來影響 GaN 層內的壓應變。”</p>
</div><p>The patterning was carried out in a GaN template layer on patterned sapphire substrates (PSS), using inductively coupled plasma (ICP) etch through a SiO2 mask (Figure 1). The pattern pitch was 20μm at an etch depth of 3μm. The patterning was performed in squares up to 500μm on a side.</p>
<div class="lb-trans"><p>圖案化是在圖案化藍寶石基板（PSS）上的 GaN 模板層中進行的，使用感應耦合等離子體（ICP）通過 SiO2 掩膜進行蝕刻（圖 1）。圖案間距為 20μm，蝕刻深度為 3μm。圖案化以邊長達 500μm 的正方形進行。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f1.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f1.jpg"/></p>
<p><em>Figure 1: Template process scheme: (a) GaN on PSS; (b) deposition of silicon dioxide (SiO2) mask; (c) inductively coupled plasma (ICP) etching of mask; (d) ICP etching to expose GaN; (e) epitaxial undoped (u-) GaN layer; (f) epitaxial n-GaN layer. (g) Different dimensioned GaN templates fabricated on same epitaxial wafer. (h) Full structure of InGaN-based red mini-LED. (i) Red-emitting quantum well (QW) structure. (j) Atomic structure of laterally relaxed GaN layer.</em></p>
<div class="lb-trans"><p><em>圖 1：模板工藝示意圖：（a）PSS 上的 GaN；（b）二氧化硅（SiO2）掩膜的沉積；（c）掩膜的感應耦合等離子體（ICP）蝕刻；（d）ICP 蝕刻以暴露 GaN；（e）外延未摻雜（u-）GaN 層；（f）外延 n-GaN 層。（g）在同一外延晶圓上製造的不同尺寸的 GaN 模板。（h）基於 InGaN 的紅色迷你 LED 的完整結構。（i）紅光發射量子阱（QW）結構。（j）橫向鬆弛的 GaN 層的原子結構。</em></p>
</div><p>The patterned template was used for metal-organic epitaxy of red LED structure with triple InGaN QWs with 30% indium content. Devices, 90μmx150μm, were fabricated with an indium tin oxide (ITO) current-spreading layer. The metal contacts were chromium/nickel/gold.</p>
<div class="lb-trans"><p>圖案化模板用於金屬有機外延紅色 LED 結構，具有 30% 銦含量的三重 InGaN 量子阱。器件尺寸為 90μm x 150μm，採用氧化銦錫（ITO）電流擴散層製造。金屬接觸為鉻/鎳/金。</p>
</div><p>The tested LEDs were from the central region of the wafer to minimize wafer-edge growth issues. The LEDs themselves were fabricated near the center of each GaN tile, well away from etched boundaries. Also, reference devices (LED E) were fabricated on material on an unpatterned template processed in the same epitaxy furnace.</p>
<div class="lb-trans"><p>測試的 LED 來自晶圓的中央區域，以最小化晶圓邊緣生長問題。LED 本身是在每個 GaN 塊的中心附近製造的，遠離蝕刻邊界。此外，參考器件（LED E）是在同一外延爐中處理的未圖案化模板材料上製造的。</p>
</div><p>Reciprocal space mapping analysis of x-ray measurements showed that smaller template sizes encouraged lateral strain relaxation. Screw and edge dislocation densities were estimated from x-ray rocking curve behaviors. The screw dislocations were an order of magnitude lower than that for edge defects.</p>
<div class="lb-trans"><p>對 X 射線測量的倒易空間映射分析顯示，較小的模板尺寸促進了橫向應變鬆弛。螺旋和邊緣位錯密度是根據 X 射線搖擺曲線行為估算的。螺旋位錯的密度比邊緣缺陷低一個數量級。</p>
</div><p>The lowest screw dislocation density of 1.63x107/cm2 was found for the smallest template square region of side 200μm (LED D). The edge defects were lowest for the slightly larger 300μm squares of LED C: 3.06x108/cm2. The researchers potentially attribute the increase in edge defects for the smallest patterned template region “to the emergence of sidewall defects during the etching process, which created pathways for the generation and propagation of edge dislocations.”</p>
<div class="lb-trans"><p>在邊長為 200μm（LED D）的最小模板正方形區域中發現的最低螺旋位錯密度為 1.63x107/cm2。邊緣缺陷在稍大一些的 300μm 正方形（LED C）中最低：3.06x108/cm2。研究人員可能將最小圖案化模板區域邊緣缺陷的增加歸因於 “在蝕刻過程中側壁缺陷的出現，這為邊緣位錯的生成和傳播創造了路徑。”</p>
</div><p><em>Table 1: Peak wavelength blue-shift and value at 10A/cm2 injection.</em></p>
<div class="lb-trans"><p><em>表 1：峯值波長藍移及 10A/cm2 注入時的值。</em></p>
</div><table>
<thead>
<tr>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
</tr>
</thead>
<tbody>
<tr>
<td>LED</td>
<td>A</td>
<td>B</td>
<td>C</td>
<td>D</td>
<td>E</td>
</tr>
<tr>
<td>Template</td>
<td>500μm</td>
<td>400μm</td>
<td>300μm</td>
<td>200μm</td>
<td>N/A</td>
</tr>
<tr>
<td>Blue-shift 0.1–10A/cm2</td>
<td>45nm</td>
<td>44nm</td>
<td>40nm</td>
<td>38nm</td>
<td>60nm</td>
</tr>
<tr>
<td>Peak wavelength 10A/cm2</td>
<td>610.3nm</td>
<td>610.4nm</td>
<td>613.6nm</td>
<td>618.8nm</td>
<td></td>
</tr>
</tbody>
</table>
<div class="lb-trans"><table>
<thead>
<tr>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
</tr>
</thead>
<tbody>
<tr>
<td>LED</td>
<td>A</td>
<td>B</td>
<td>C</td>
<td>D</td>
<td>E</td>
</tr>
<tr>
<td>模板</td>
<td>500μm</td>
<td>400μm</td>
<td>300μm</td>
<td>200μm</td>
<td>N/A</td>
</tr>
<tr>
<td>藍移 0.1–10A/cm2</td>
<td>45nm</td>
<td>44nm</td>
<td>40nm</td>
<td>38nm</td>
<td>60nm</td>
</tr>
<tr>
<td>峯值波長 10A/cm2</td>
<td>610.3nm</td>
<td>610.4nm</td>
<td>613.6nm</td>
<td>618.8nm</td>
<td></td>
</tr>
</tbody>
</table>
</div><p>Electroluminescence (EL) studies showed reduced blue-shift of the spectrum with increased current injection (Table 1). The blue-shift was also lessened in the LEDs on reduced size templates. Such blue-shift effects are typically attributed to quantum-confined Stark effects (QCSEs) where lattice strain and charge polarization of the different materials lead to electric fields across the QWs that tend to discourage radiative recombination of electrons and holes, reducing light output, particularly in longer-wavelength devices.</p>
<div class="lb-trans"><p>電致發光（EL）研究表明，隨着電流注入的增加，光譜的藍移減少（表 1）。在較小尺寸模板上的 LED 中，藍移也有所減小。這種藍移效應通常歸因於量子限制斯塔克效應（QCSE），其中晶格應變和不同材料的電荷極化導致量子阱中的電場，抑制電子和空穴的輻射覆合，降低光輸出，特別是在長波長器件中。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f2.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/dec/25114_hefei_f2.jpg"/></p>
<p><em>Figure 2: Current density dependences of prototype red InGaN-based mini-LEDs grown on GaN templates A–E. (a) Peak wavelength. (b) Relative luminous intensity. (c) Normalized EQE. (d) Current–voltage curves of LEDs A–E.</em></p>
<div class="lb-trans"><p><em>圖 2：在 GaN 模板 A–E 上生長的原型紅色 InGaN 基迷你 LED 的電流密度依賴性。（a）峯值波長。（b）相對光強度。（c）歸一化的 EQE。（d）LED A–E 的電流–電壓曲線。</em></p>
</div><p>The researchers believe that the enhanced relaxation that comes with a reduced template size increased indium incorporation in the QWs, allowing LED D to maintain a longer peak wavelength at higher current injection (Figure 2).</p>
<div class="lb-trans"><p>研究人員認為，隨着模板尺寸的減小，增強的鬆弛增加了量子阱中銦的摻入，使得 LED D 在更高電流注入下保持更長的峯值波長（圖 2）。</p>
</div><p>In terms of emission intensity, LED C provides better performance. The researchers suggest that the degradation of LED D was the result of “degraded crystal quality, with a higher indium fraction typically leading to an increased defect density (e.g. V-defects or dislocations that form to relieve strain)”.</p>
<div class="lb-trans"><p>就發射強度而言，LED C 提供了更好的性能。研究人員認為 LED D 的退化是由於 “晶體質量下降，較高的銦比例通常導致缺陷密度增加（例如，形成以緩解應變的 V 缺陷或位錯）”。</p>
</div><p>The external quantum efficiency (EQE) performance of LED C maintained an edge over the others. The reference LED E had a low EQE peak, but only slowly declined, almost matching the EQE of LED C at 10A/cm2.</p>
<div class="lb-trans"><p>LED C 的外部量子效率（EQE）表現優於其他 LED。參考 LED E 的 EQE 峯值較低，但下降緩慢，在 10A/cm2 時幾乎與 LED C 的 EQE 相匹配。</p>
</div><p>The team comments: “We attribute LED E’s small droop to its higher density of dislocations and non-radiative recombination centers (due to the lack of strain-relief patterning) relative to the patterned LEDs, which leads to strong SRH recombination even at low and moderate currents. As a result, LED E’s EQE is already suppressed at low injection levels by defect-related SRH recombination. As the current density increases, SRH recombination becomes saturated at high currents, and the remaining efficiency droop is dominated by Auger recombination and leakage mechanisms, which are common to all LEDs.”</p>
<div class="lb-trans"><p>團隊評論道：“我們將 LED E 的小衰減歸因於其相對於有圖案的 LED 更高的位錯和非輻射覆閤中心的密度（由於缺乏應變釋放圖案），這導致即使在低和中等電流下也會發生強烈的 SRH 複合。因此，LED E 的外量子效率在低注入水平下已經受到缺陷相關的 SRH 複合的抑制。隨着電流密度的增加，SRH 複合在高電流下變得飽和，剩餘的效率衰減則主要由 Auger 複合和泄漏機制主導，這在所有 LED 中都是常見的。”</p>
</div><p>Red LEDs GaN InGaN AlInGaP</p>
<div class="lb-trans"><p>紅色 LED GaN InGaN AlInGaP</p>
</div><p>https://doi.org/10.1109/TED.2025.3630618</p>
<div class="lb-trans"><p>https://doi.org/10.1109/TED.2025.3630618</p>
</div><p><em>The author Mike Cooke is a freelance technology journalist who has worked in the semiconductor and advanced technology sectors since 1997.</em></p>
<div class="lb-trans"><p><em>作者 Mike Cooke 是一位自由職業的科技記者，自 1997 年以來一直在半導體和先進技術領域工作。</em></p>
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通過圖案化氮化鎵來提升紅色 LED 的性能