--- title: "由於人工智能導致短缺,DRAM 價格飆升近 500%" type: "News" locale: "zh-HK" url: "https://longbridge.com/zh-HK/news/286214737.md" description: "韓國的 DRAM 出口價格同比上漲了 497%,創下十年來的最大增幅,主要受到 AI 服務器需求的推動。三星、SK 海力士和美光科技主導市場,控制着全球約 95% 的 DRAM 供應,這使它們擁有顯著的定價權。由於新的製造工廠預計要到 2027 年或更晚才能達到量產,短缺情況預計將持續,維持高企的價格和供應限制" datetime: "2026-05-13T07:23:18.000Z" locales: - [zh-CN](https://longbridge.com/zh-CN/news/286214737.md) - [en](https://longbridge.com/en/news/286214737.md) - [zh-HK](https://longbridge.com/zh-HK/news/286214737.md) --- # 由於人工智能導致短缺,DRAM 價格飆升近 500% Historic price spike: DRAM export prices from South Korea have surged 497% year over year, the steepest increase in a decade, driven by AI server demand. Market power concentrated: Samsung, SK Hynix, and Micron control about 95% of global DRAM supply, giving them significant pricing leverage amid the shortage. Shortage to persist: New fabrication plants are not expected to reach volume production until 2027 or later, prolonging supply constraints and elevated prices. ### 相關股票 - [MU.US](https://longbridge.com/zh-HK/quote/MU.US.md) - [PSI.US](https://longbridge.com/zh-HK/quote/PSI.US.md) - [SOXL.US](https://longbridge.com/zh-HK/quote/SOXL.US.md) - [DRAM.US](https://longbridge.com/zh-HK/quote/DRAM.US.md) - [07709.HK](https://longbridge.com/zh-HK/quote/07709.HK.md) - [MULL.US](https://longbridge.com/zh-HK/quote/MULL.US.md) - [SOXQ.US](https://longbridge.com/zh-HK/quote/SOXQ.US.md) - [MUU.US](https://longbridge.com/zh-HK/quote/MUU.US.md) - [SOXX.US](https://longbridge.com/zh-HK/quote/SOXX.US.md) - [SMH.US](https://longbridge.com/zh-HK/quote/SMH.US.md) - [XSD.US](https://longbridge.com/zh-HK/quote/XSD.US.md) - [SSNGY.US](https://longbridge.com/zh-HK/quote/SSNGY.US.md) - [SMSN.UK](https://longbridge.com/zh-HK/quote/SMSN.UK.md) ## 相關資訊與研究 - [美股因地緣政治與 AI 晶片需求下跌,投資者需謹慎評估風險與機會](https://longbridge.com/zh-HK/news/286686274.md) - [三星罷工美光股價為何跌?外媒:記憶體恐衝擊 AI 供應鏈](https://longbridge.com/zh-HK/news/286869338.md) - [大陸記憶體廠獲利大爆發 長鑫科技估上半年狂賺 2,610 億](https://longbridge.com/zh-HK/news/286890663.md) - [三星電子 HBM 良率大突破 HBM3E 核心 DRAM 良率衝上 92%](https://longbridge.com/zh-HK/news/286842766.md) - [三星擬開發「行動版 HBM」!結合 VCS、FOWLP 封裝瞄準邊緣 AI](https://longbridge.com/zh-HK/news/286705079.md)