---
type: "Topics"
locale: "zh-HK"
url: "https://longbridge.com/zh-HK/topics/39236007.md"
description: "$Sandisk(SNDK.US) Samsung Reportedly Cooperates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash MemoryJinshi Data, March 13 - According to reports, Samsung Electronics is cooperating with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team composed of Samsung Semiconductor Research Institute, NVIDIA, and Georgia Institute of Technology has successfully developed a "Physical Information Neural Operator" model. This model analyzes the performance of ferroelectric-based NAND devices at a speed more than ten thousand times faster than existing models, and the related results have been publicly announced. Based on the research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.(From Jinshi Data App)"
datetime: "2026-03-12T23:43:54.000Z"
locales:
  - [en](https://longbridge.com/en/topics/39236007.md)
  - [zh-CN](https://longbridge.com/zh-CN/topics/39236007.md)
  - [zh-HK](https://longbridge.com/zh-HK/topics/39236007.md)
author: "[REVTAU](https://longbridge.com/zh-HK/profiles/16254879.md)"
---

> 支持的語言: [English](https://longbridge.com/en/topics/39236007.md) | [简体中文](https://longbridge.com/zh-CN/topics/39236007.md)


# $Sandisk(SNDK.US) Samsung Reportedly Cooperates wi…


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- [Samsung Electronics  (SSNGY.US)](https://longbridge.com/zh-HK/quote/SSNGY.US.md)
- [Sandisk (SNDK.US)](https://longbridge.com/zh-HK/quote/SNDK.US.md)