US ITC preliminary determination finds violation of Infineon patent by Innoscience

The US International Trade Commission (ITC) has preliminarily determined that Innoscience violated Infineon's patent (US 9,899,481) related to GaN technology. Both patents asserted by Infineon are deemed valid. A final decision is expected by April 2026, potentially leading to an import ban on Innoscience's products in the USA. Infineon emphasizes its commitment to defending its patents and fostering innovation. Parallel legal actions are ongoing in Germany, with Infineon securing favorable rulings.

News: Microelectronics

In a preliminary determination, the US International Trade Commission (ITC) has found violation of one patent (US 9,899,481) owned by Infineon Technologies AG of Munich, Germany concerning gallium nitride (GaN) technology by China-based Innoscience (Suzhou) Technology Holding Co Ltd, which manufactures GaN-on-silicon power chips on 8” silicon wafers. In addition, the ITC confirmed that both patents asserted by Infineon in the proceedings before the ITC (US 9,899,481 and 9,070,755) are legally valid.

The case centers on the unauthorized use of Infineon’s patented GaN technologies by Innoscience. The Commission’s final determination is expected to be issued on 2 April 2026. If this preliminary decision is confirmed, then it will lead to an import ban of Innoscience’s allegedly infringing products into the USA.

“This ruling is another testament to the strength of Infineon’s intellectual property and confirms our commitment to vigorously defend our patent portfolio against infringements and ensuring fair competition in the market,” says Johannes Schoiswohl, senior VP & head of Infineon’s GaN Systems business line. “We remain dedicated to fostering innovation and advancing semiconductor technology to address the world's most pressing challenges, from decarbonization to digital transformation.”

In a parallel dispute in Germany, the German patent office recently confirmed the validity of an Infineon patent and upheld it in slightly amended form. Infineon is asserting infringement of this patent (DE102017100947) in the Munich District Court. Already in August, the Munich District Court I (Landgericht München I) found infringement by Innoscience of another Infineon patent (DE102014113465).

Munich District Court rules in favor of Infineon in patent-infringement case against Innoscience

Innoscience files lawsuits against Infineon in China

Infineon adds three patents to infringement lawsuit against Innoscience

Innoscience refutes Infineon’s US lawsuit alleging patent infringement

Infineon files lawsuit in USA against Innoscience

GaN-on-SiInfineon