China–US Team Develops Groundbreaking Etching Technique for Next-Gen Semiconductors

A collaborative team from China and the US has developed a novel etching technique for next-gen semiconductors, enabling the creation of high-performance optoelectronic devices. Researchers from the University of Science and Technology of China, ShanghaiTech University, and Purdue University achieved controllable preparation of mosaic lateral heterostructures in two-dimensional lead halide perovskites. Their innovative "self-etching" method utilizes internal crystal stress to create precise patterns, paving the way for advanced displays with densely packed pixels emitting various colors.