<div id="readability-page-1">News: Microelectronics Navitas exhibiting solutions for AI data-center, grid and energy infrastructure, performance computing, and industrial electrificationIn booth #2027 at the IEEE Applied Power Electronics Conference (APEC 2026) in San Antonio, Texas (22–26 March), Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — is exhibiting its latest innovations for AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. Navitas is unveiling the 10kW ‘GaN-powered’ 800V–to–50V DC–DC platform that employs 650V and 100V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. The full-brick package design platform achieves 2.1kW/in3 power density and also supports ±400VDC standard for AI data centers. Additionally, Navitas is featuring a 12kW AI data-center power supply, which leverages IntelliWeave digital control to achieve what is claimed to be unmatched efficiency, power density and performance, along with an 8.5kW OCP power supply and 4.5kW CRPS power supply. For next-generation solid-state transformer (SST) applications demanding industry-leading efficiency — exceeding 98% conversion from medium-voltage grids (13.8kVAC to 34.5kVAC) to 800VDC or 1500VDC for AI data centers and advanced energy infrastructure — Navitas is showcasing its latest SiCPAK power modules. The portfolio features ultra-high-voltage (UHV) 3300V and 2300V solutions, along with 1200V high-voltage options, delivering what is claimed to be breakthrough performance, scalability and reliability for mission-critical power systems. The newly released gate driver evaluation board for dynamic characterization of UHV SiCPAK power modules is also on display. Advancing the future of AI-enabled high-performance computing, Navitas is debuting ultra-compact 240W and 300W power solutions built on its latest GaNFast IC innovations for superior efficiency and power density. Navitas is also showcasing high-efficiency GaN-based motor control solutions ranging from 400W to 1kW for advanced industrial applications. Navitas speaking sessions at APEC include the following: <ul> <li>24 March (8:55–9:20am CT, Location: IS01.2) ‘Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications’ by Sumit Jadav; </li> <li>25 March (11:05–11:30am CT, Location: IS07.6) ‘High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800V AI Data Center DC–DC Brick Solutions’ by Llew Vaughan-Edmunds, VP &amp; general manager, GaN business unit; </li> <li>26 March (11:35–11:50am CT, Location: IS27.4) ‘Single-stage Power Converter Enabled by GaN Bidirectional Switches’ by Llew Vaughan-Edmunds. </li></ul>Navitas unveils fifth-generation SiC Trench-Assisted Planar MOSFET technologyNavitas sampling 3300V and 2300V UHV silicon carbide product portfolioSiC power MOSFETwww.navitassemi.com </div>

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Navitas Semiconductor Corp is showcasing its latest innovations at the IEEE Applied Power Electronics Conference (APEC 2026) in San Antonio, Texas. The company is exhibiting solutions for AI data centers, performance computing, energy infrastructure, and industrial electrification, including a 10kW GaN-powered DC-DC platform and a 12kW AI data-center power supply. Navitas is also presenting ultra-high-voltage SiC power modules and high-efficiency GaN-based motor control solutions. Speaking sessions will cover advancements in SiC performance and GaN ICs for AI data centers.

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Navitas exhibiting solutions for AI data-center, grid and energy infrastructure, performance computing, and industrial electrification