Applied Materials, Intel collaborate on AI chipmaking technology development

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Applied Materials and Intel have announced a collaboration to accelerate the development of AI chipmaking technology. The partnership focuses on next-generation transistors, interconnect scaling, and advanced packaging, including Foveros-based 3D stacking. R&D efforts will be coordinated between Applied’s EPIC Center in Silicon Valley and Intel’s campus in Hillsboro, Oregon. This initiative aims to enhance performance metrics such as interconnect density and thermal efficiency while speeding up the transition from research to high-volume manufacturing in the US.

  • Applied Materials entered a collaboration with Intel to speed development of chipmaking technology for AI-driven computing. * Work will span next-generation transistors, interconnect scaling, and advanced packaging aimed at faster time-to-market. * R&D will be coordinated between Applied’s EPIC Center in Silicon Valley and Intel’s R&D campus in Hillsboro, Oregon. * Partnership includes advanced packaging for Foveros-based 3D stacking to boost interconnect density, power delivery, and thermal performance. * EPIC Center is scheduled to be operationally ready this year, targeting faster transfer from research to high-volume manufacturing in the US. Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Applied Materials Inc. published the original content used to generate this news brief via GlobeNewswire (Ref. ID: 202610060900PRIMZONEFULLFEED9840132) on October 06, 2026, and is solely responsible for the information contained therein. © Copyright 2026 - Public Technologies (PUBT)

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