Hardik Shah
2026.06.08 12:35

πŸ“’ 𝐉𝐔𝐒𝐓 𝐈𝐍: $Navitas Semiconductor(NVTS.US) Navitas Launches New 𝐔𝐇𝐕-π“πŽ-πŸπŸ’πŸ•-πŸ’-πˆπ’πŽ SiC MOSFET Package

πŸ‘‰ 𝐊𝐞𝐲 𝐇𝐒𝐠𝐑π₯𝐒𝐠𝐑𝐭𝐬:

➀ Navitas unveils 𝐔𝐇𝐕-π“πŽ-πŸπŸ’πŸ•-πŸ’-πˆπ’πŽ package for SiC MOSFETs.

➀ Package supports πŸπŸπŸŽπŸŽπ• to πŸ‘πŸ‘πŸŽπŸŽπ• π†πžπ§πžπ’π’π‚β„’ power devices.

➀ Features over πŸ”,πŸŽπŸŽπŸŽπ• integrated isolation and 𝟏𝟐𝐦𝐦+ creepage distance.

➀ Eliminates need for external 𝐑𝐒𝐠𝐑-𝐯𝐨π₯𝐭𝐚𝐠𝐞 𝐒𝐬𝐨π₯𝐚𝐭𝐒𝐨𝐧 components.

➀ New design cuts thermal resistance by up to πŸ”πŸŽ%.

➀ Enables up to πŸπŸ“πŸŽ% higher 𝐩𝐨𝐰𝐞𝐫 𝐝𝐒𝐬𝐬𝐒𝐩𝐚𝐭𝐒𝐨𝐧 capability.

➀ Targets 𝐠𝐫𝐒𝐝, energy storage, solid-state transformer, and renewable applications.

πŸ’¬ π„π±π©πžπ«π­ π’π­πšπ­πžπ¦πžπ§π­:

β€œUHV-TO-247-4-ISO represents a breakthrough in high-voltage power semiconductor packaging,” said Paul Wheeler, VP and GM of the SiC Business Unit at Navitas.

β€œThe package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor.”

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