onsemi and Innoscience Partner to Accelerate Global GaN Power Device Production
ON Semiconductor Corporation (onsemi) and Innoscience have signed a memorandum of understanding to expand production of GaN power devices. The partnership aims to leverage onsemi's system integration expertise and Innoscience's GaN wafer manufacturing capabilities to accelerate global rollout of energy-efficient solutions across various markets, targeting a $2.9 billion opportunity by 2030.
ON Semiconductor Corporation (onsemi) has announced the signing of a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices. The collaboration aims to combine onsemi’s expertise in system integration, drivers, and packaging with Innoscience’s high-volume GaN wafer manufacturing capabilities. This partnership is expected to accelerate the global rollout of energy-efficient GaN power solutions, targeting industrial, automotive, telecom infrastructure, consumer, and AI data center markets. The joint effort seeks to provide cost-effective, smaller, and more efficient power devices and scale GaN manufacturing to meet a projected $2.9 billion market opportunity by 2030. Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. ON Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: GNW9595363-en) on December 02, 2025, and is solely responsible for the information contained therein. © Copyright 2025 - Public Technologies (PUBT)
