TSMC and one of Taiwan’s top engineering schools have made a breakthrough in next-generation transistors with a high-performance, single-layer molybdenum disulfide (MoS₂) top-gate transistor, media report, adding researchers globally have been looking at novel materials as a way to move chip technology further below 1nm. MoS₂ could be used in 0.7nm chips (7-Angstrom) and CFET architectures, the chip industry’s main next-generation transistor architecture. (Complimentary Field-Effect Transistor). TSMC worked with a research team from National Yang Ming Chiao Tung University (NYCU). $Taiwan Semiconductor(TSM.US) #semiconductors

Source: Dan Nystedt