<p>新闻：微电子</p>
<p>英飞凌推出 CoolSiC MOSFETs 1200V G2 Q-DPAK 封装</p>
<p>德国慕尼黑的英飞凌科技公司推出了 CoolSiC MOSFETs 1200V G2，采用顶侧冷却（TSC）Q-DPAK 封装。新设备据称提供了优化的热性能、系统效率和功率密度，专为需要高性能和可靠性的苛刻工业应用而设计，如电动车充电器、太阳能逆变器、不间断电源、马达驱动和固态断路器。</p>
<p>新的 CoolSiC 1200V G2 技术相比于前一代产品有显著改进，使得等效 RDS(on) 器件的开关损耗降低多达 25%，系统效率提高最多 0.1%。利用英飞凌改进的.XT 芯片连接技术，G2 器件的热阻降低超过 15%，MOSFET 温度相比 G1 系列产品降低 11%。RDS(on) 值范围从 4mΩ到 78mΩ，加上广泛的产品组合，使设计师能够灵活优化其目标应用的系统性能。此外，新技术支持在结温（Tvj）高达 200°C 的过载操作，并具有对寄生开启的高鲁棒性，确保在动态和苛刻条件下的可靠运行。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg"/></p>
<p><em>图片：CoolSiC MOSFETs 1200V G2 在顶侧冷却的 Q-DPAK 封装中。</em></p>
<p>CoolSiC MOSFETs 1200V G2 提供两种 Q-DPAK 配置：单开关和双半桥。两种变体都是英飞凌更广泛的 X-DPAK 顶侧冷却平台的一部分。所有 TSC 变体（包括 Q-DPAK 和 TOLT）具有标准化的封装高度 2.3mm，该平台提供设计灵活性，使客户能够在单个散热器组件下扩展和组合不同的产品。这种设计灵活性简化了先进电力系统的开发，使客户更容易定制和扩展其解决方案。</p>
<p>Q-DPAK 封装通过使设备的顶部表面直接散热到散热器来增强热性能。这种直接热路径提供的热传导效率显著优于传统的底侧冷却封装，从而实现更紧凑的设计。此外，Q-DPAK 封装布局设计允许最小化寄生电感，这对更高的开关速度至关重要。这增强了系统效率并降低了电压过冲风险。该封装的小型占地面积支持紧凑的系统设计，同时与自动化组装过程的兼容性简化了制造，确保了成本效率和可扩展性。</p>
<p>CoolSiC MOSFET 1200V G2 的 Q-DPAK 单开关和双半桥封装变体现已上市。</p>
<p>英飞凌将 Q-DPAK 和 TOLL 封装添加到工业 CoolSiC MOSFETs 650V G2 系列中</p>
<p>英飞凌推出 CoolSiC MOSFET 第二代</p>
<p>英飞凌推出新一代 1200V CoolSiC 沟槽 MOSFET，采用 TO263-7 封装</p>
<p>英飞凌</p>
<p>www.infineon.com/coolsic</p>

英飞凌(ADR)

<p>英飞凌 (ADR) 推出了 CoolSiC MOSFETs 1200V G2，采用 Q-DPAK 封装，专为电动汽车充电器和太阳能逆变器等高性能工业应用设计。这款新设备提供了优化的热性能、系统效率和功率密度，开关损耗降低了多达 25%，并改善了热阻。Q-DPAK 封装提供单开关和双半桥配置，增强了散热性能，支持紧凑设计，简化了先进电力系统的开发。CoolSiC MOSFET 1200V G2 现已向客户提供</p>

<p>News: Microelectronics</p>
<div class="lb-trans"><p>新闻：微电子</p>
</div><p>Infineon launches CoolSiC MOSFETs 1200V G2 in Q-DPAK package</p>
<div class="lb-trans"><p>英飞凌推出 CoolSiC MOSFETs 1200V G2 Q-DPAK 封装</p>
</div><p>Infineon Technologies AG Munich, Germany has launched the CoolSiC MOSFETs 1200V G2 in a top-side-cooled (TSC) Q-DPAK package. Delivering what is said to be optimized thermal performance, system efficiency and power density, the new devices were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers.</p>
<div class="lb-trans"><p>德国慕尼黑的英飞凌科技公司推出了 CoolSiC MOSFETs 1200V G2，采用顶侧冷却（TSC）Q-DPAK 封装。新设备据称提供了优化的热性能、系统效率和功率密度，专为需要高性能和可靠性的苛刻工业应用而设计，如电动车充电器、太阳能逆变器、不间断电源、马达驱动和固态断路器。</p>
</div><p>The new CoolSiC 1200V G2 technology offers significant improvements over the previous generation, enabling up to 25% lower switching losses for equivalent RDS(on) devices, increasing system efficiency by up to 0.1%. Utilizing Infineon’s improved .XT die attach interconnection technology, the G2 devices achieve more than 15% lower thermal resistance and an 11% reduction in MOSFET temperature compared with G1 family products. RDS(on) values ranging from 4mΩ to 78mΩ, along with a broad product portfolio, enable designers the flexibility to optimize system performance for their target applications. Furthermore, the new technology supports overload operation up to a junction temperature (Tvj) of 200°C and features high robustness against parasitic turn-on, ensuring reliable operation under dynamic and demanding conditions.</p>
<div class="lb-trans"><p>新的 CoolSiC 1200V G2 技术相比于前一代产品有显著改进，使得等效 RDS(on) 器件的开关损耗降低多达 25%，系统效率提高最多 0.1%。利用英飞凌改进的.XT 芯片连接技术，G2 器件的热阻降低超过 15%，MOSFET 温度相比 G1 系列产品降低 11%。RDS(on) 值范围从 4mΩ到 78mΩ，加上广泛的产品组合，使设计师能够灵活优化其目标应用的系统性能。此外，新技术支持在结温（Tvj）高达 200°C 的过载操作，并具有对寄生开启的高鲁棒性，确保在动态和苛刻条件下的可靠运行。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg"/></p>
<p><em>Picture: The CoolSiC MOSFETs 1200V G2 in a top-side-cooled Q-DPAK package.</em></p>
<div class="lb-trans"><p><em>图片：CoolSiC MOSFETs 1200V G2 在顶侧冷却的 Q-DPAK 封装中。</em></p>
</div><p>The CoolSiC MOSFETs 1200V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side-cooling platform. With a standardized package height of 2.3mm across all TSC variants – including Q-DPAK and TOLT – the platform offers design flexibility and enables customers to scale and combine different products under a single heatsink assembly. This design flexibility simplifies advanced power system development, making it easier for customers to customize and scale their solutions.</p>
<div class="lb-trans"><p>CoolSiC MOSFETs 1200V G2 提供两种 Q-DPAK 配置：单开关和双半桥。两种变体都是英飞凌更广泛的 X-DPAK 顶侧冷却平台的一部分。所有 TSC 变体（包括 Q-DPAK 和 TOLT）具有标准化的封装高度 2.3mm，该平台提供设计灵活性，使客户能够在单个散热器组件下扩展和组合不同的产品。这种设计灵活性简化了先进电力系统的开发，使客户更容易定制和扩展其解决方案。</p>
</div><p>The Q-DPAK package enhances thermal performance by enabling direct heat dissipation from the device’s top surface to the heatsink. This direct thermal path delivers significantly better heat transfer efficiency than traditional bottom-side-cooled packages, enabling more compact designs. Additionally, the Q-DPAK package layout design allows for minimized parasitic inductance, which is critical for higher switching speeds. This enhances system efficiency and reduces voltage overshoot risk. The small footprint of the package supports compact system designs, while its compatibility with automated assembly processes simplifies manufacturing, ensuring cost efficiency and scalability.</p>
<div class="lb-trans"><p>Q-DPAK 封装通过使设备的顶部表面直接散热到散热器来增强热性能。这种直接热路径提供的热传导效率显著优于传统的底侧冷却封装，从而实现更紧凑的设计。此外，Q-DPAK 封装布局设计允许最小化寄生电感，这对更高的开关速度至关重要。这增强了系统效率并降低了电压过冲风险。该封装的小型占地面积支持紧凑的系统设计，同时与自动化组装过程的兼容性简化了制造，确保了成本效率和可扩展性。</p>
</div><p>The CoolSiC MOSFET 1200V G2 in Q-DPAK single switch and dual half-bridge package variants are available now.</p>
<div class="lb-trans"><p>CoolSiC MOSFET 1200V G2 的 Q-DPAK 单开关和双半桥封装变体现已上市。</p>
</div><p>Infineon adds Q-DPAK and TOLL packages to industrial CoolSiC MOSFETs 650V G2 range</p>
<div class="lb-trans"><p>英飞凌将 Q-DPAK 和 TOLL 封装添加到工业 CoolSiC MOSFETs 650V G2 系列中</p>
</div><p>Infineon launches CoolSiC MOSFET Generation 2</p>
<div class="lb-trans"><p>英飞凌推出 CoolSiC MOSFET 第二代</p>
</div><p>Infineon makes available new-generation 1200V CoolSiC trench MOSFET in TO263-7 package</p>
<div class="lb-trans"><p>英飞凌推出新一代 1200V CoolSiC 沟槽 MOSFET，采用 TO263-7 封装</p>
</div><p>Infineon</p>
<div class="lb-trans"><p>英飞凌</p>
</div><p>www.infineon.com/coolsic</p>
<div class="lb-trans"><p>www.infineon.com/coolsic</p>
</div>

英飞凌推出 CoolSiC MOSFETs 1200V G2，采用 Q-DPAK 封装