<p>新闻：微电子</p>
<p>英飞凌与罗姆合作开发碳化硅功率电子封装</p>
<p>德国慕尼黑的英飞凌科技股份公司与日本京都的罗姆株式会社签署了一份谅解备忘录，合作开发用于车载充电器、光伏、能源存储系统和人工智能数据中心等应用的碳化硅（SiC）功率半导体封装。具体而言，双方旨在使彼此成为 SiC 功率器件选定封装的第二来源，从而提高客户的设计和采购灵活性。未来，客户将能够从英飞凌和罗姆两家公司采购具有兼容外壳的器件。这一合作将确保无缝兼容和可互换，以满足特定客户需求。</p>
<p>“我们的合作将为客户提供更广泛的选择和更大的设计与采购灵活性，使他们能够开发出更高能效的应用，进一步推动脱碳进程，” 英飞凌绿色工业电力部门总裁彼得·瓦尔维尔博士表示。</p>
<p>“通过合作，我们可以推动创新，减少复杂性，提高客户满意度，最终塑造功率电子行业的未来，” 罗姆功率器件业务董事会成员兼执行官井野和秀博士表示。</p>
<p><em><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" width="300" height="296" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg"/></em></p>
<p><em>图片：左：英飞凌绿色工业电力部门总裁彼得·瓦尔维尔博士；右：罗姆功率器件业务董事会成员兼执行官井野和秀博士。</em></p>
<p>根据协议，罗姆将采用英飞凌的碳化硅顶侧冷却平台，包括 TOLT、D-DPAK、Q-DPAK、Q-DPAK 双重和 H-DPAK 封装。英飞凌的顶侧冷却平台提供多个优势，包括所有封装标准高度为 2.3mm。这有助于设计并降低冷却系统成本，同时还提高了电路板空间利用率，功率密度可提高至两倍。</p>
<p>与此同时，英飞凌将采用罗姆的 DOT-247 封装，采用 SiC 半桥配置，以开发兼容封装。这将扩展英飞凌最近宣布的双 TO-247 IGBT 产品组合，以包括 SiC 半桥解决方案。罗姆的 DOT-247 相比标准分立封装提供更高的功率密度，并减少组装工作。其独特结构集成了两个 TO-247 封装，使热阻降低约 15%，电感降低 50%。这些优势使其功率密度比 TO-247 高出 2.3 倍。</p>
<p>英飞凌与罗姆计划在未来扩大合作，涵盖其他硅基和宽禁带功率技术的封装，如 SiC 和氮化镓（GaN）。这预计将进一步加强两家公司之间的关系，并为客户提供更广泛的解决方案和采购选择。</p>
<p>基于 SiC 的半导体通过更高效地切换电力，提高了高功率应用的性能，确保在极端条件下的高可靠性和稳健性，同时允许更小的设计。使用英飞凌和罗姆的 SiC 产品，客户可以开发出高能效的解决方案，并提高电动汽车充电、可再生能源系统和人工智能数据中心等应用的功率密度。</p>
<p>罗姆推出 DOT-247 2 合 1 SiC 模塑模块</p>
<p>英飞凌罗姆 SiC 功率模块</p>
<p>www.rohm.com/products/sic-power-devices</p>
<p>www.infineon.com</p>

英飞凌(ADR)

半导体 3 倍做多 - Direxion

<p>英飞凌科技股份公司与罗姆株式会社签署了一份谅解备忘录，旨在合作开发碳化硅（SiC）功率半导体封装。此次合作旨在通过允许客户从两家公司采购，增强设计和采购的灵活性。该合作将利用英飞凌的顶侧冷却平台和罗姆的 DOT-247 封装，提高功率密度并降低成本。未来的扩展可能包括更多的封装和技术，进一步增强客户在节能应用中的选择</p>

<p>News: Microelectronics</p>
<div class="lb-trans"><p>新闻：微电子</p>
</div><p>Infineon and ROHM collaborating on silicon carbide power electronics packages</p>
<div class="lb-trans"><p>英飞凌与罗姆合作开发碳化硅功率电子封装</p>
</div><p>Infineon Technologies AG of Munich, Germany and ROHM Co Ltd of Kyoto, Japan have signed a memorandum of understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, which should increase design and procurement flexibility for customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration should ensure seamless compatibility and interchangeability to match specific customer needs.</p>
<div class="lb-trans"><p>德国慕尼黑的英飞凌科技股份公司与日本京都的罗姆株式会社签署了一份谅解备忘录，合作开发用于车载充电器、光伏、能源存储系统和人工智能数据中心等应用的碳化硅（SiC）功率半导体封装。具体而言，双方旨在使彼此成为 SiC 功率器件选定封装的第二来源，从而提高客户的设计和采购灵活性。未来，客户将能够从英飞凌和罗姆两家公司采购具有兼容外壳的器件。这一合作将确保无缝兼容和可互换，以满足特定客户需求。</p>
</div><p>“Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization,” says Dr Peter Wawer, division president Green Industrial Power at Infineon.</p>
<div class="lb-trans"><p>“我们的合作将为客户提供更广泛的选择和更大的设计与采购灵活性，使他们能够开发出更高能效的应用，进一步推动脱碳进程，” 英飞凌绿色工业电力部门总裁彼得·瓦尔维尔博士表示。</p>
</div><p>“By working together, we can drive innovation, reduce complexity and increase customer satisfaction, ultimately shaping the future of the power electronics industry,” says Dr Kazuhide Ino, board member and managing executive officer in charge of Power Devices Business at ROHM.</p>
<div class="lb-trans"><p>“通过合作，我们可以推动创新，减少复杂性，提高客户满意度，最终塑造功率电子行业的未来，” 罗姆功率器件业务董事会成员兼执行官井野和秀博士表示。</p>
</div><p><em><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg"/></em></p>
<div class="lb-trans"><p><em><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg"/></em></p>
</div><p><em>Picture: Left: Dr Peter Wawer (division president Green Industrial Power at Infineon); right: Dr Kazuhide Ino (board member &amp; managing executive officer, in charge of Power Devices Business at ROHM).</em></p>
<div class="lb-trans"><p><em>图片：左：英飞凌绿色工业电力部门总裁彼得·瓦尔维尔博士；右：罗姆功率器件业务董事会成员兼执行官井野和秀博士。</em></p>
</div><p>As part of the agreement, ROHM will adopt Infineon’s top-side-cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side-cooling platform offers several benefits, including a standardized height of 2.3mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.</p>
<div class="lb-trans"><p>根据协议，罗姆将采用英飞凌的碳化硅顶侧冷却平台，包括 TOLT、D-DPAK、Q-DPAK、Q-DPAK 双重和 H-DPAK 封装。英飞凌的顶侧冷却平台提供多个优势，包括所有封装标准高度为 2.3mm。这有助于设计并降低冷却系统成本，同时还提高了电路板空间利用率，功率密度可提高至两倍。</p>
</div><p>At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared with standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables the reduction of thermal resistance by about 15% and inductance by 50% compared with the TO-247. The advantages bring 2.3 times higher power density than the TO-247.</p>
<div class="lb-trans"><p>与此同时，英飞凌将采用罗姆的 DOT-247 封装，采用 SiC 半桥配置，以开发兼容封装。这将扩展英飞凌最近宣布的双 TO-247 IGBT 产品组合，以包括 SiC 半桥解决方案。罗姆的 DOT-247 相比标准分立封装提供更高的功率密度，并减少组装工作。其独特结构集成了两个 TO-247 封装，使热阻降低约 15%，电感降低 50%。这些优势使其功率密度比 TO-247 高出 2.3 倍。</p>
</div><p>Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This is expected to further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.</p>
<div class="lb-trans"><p>英飞凌与罗姆计划在未来扩大合作，涵盖其他硅基和宽禁带功率技术的封装，如 SiC 和氮化镓（GaN）。这预计将进一步加强两家公司之间的关系，并为客户提供更广泛的解决方案和采购选择。</p>
</div><p>Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using Infineon’s and ROHM’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.</p>
<div class="lb-trans"><p>基于 SiC 的半导体通过更高效地切换电力，提高了高功率应用的性能，确保在极端条件下的高可靠性和稳健性，同时允许更小的设计。使用英飞凌和罗姆的 SiC 产品，客户可以开发出高能效的解决方案，并提高电动汽车充电、可再生能源系统和人工智能数据中心等应用的功率密度。</p>
</div><p>ROHM launches DOT-247 2-in-1 SiC molded module</p>
<div class="lb-trans"><p>罗姆推出 DOT-247 2 合 1 SiC 模塑模块</p>
</div><p>InfineonRohmSiC power modules</p>
<div class="lb-trans"><p>英飞凌罗姆 SiC 功率模块</p>
</div><p>www.rohm.com/products/sic-power-devices</p>
<div class="lb-trans"><p>www.rohm.com/products/sic-power-devices</p>
</div><p>www.infineon.com</p>
<div class="lb-trans"><p>www.infineon.com</p>
</div>

英飞凌和 ROHM 正在合作开发碳化硅功率电子封装