<p>首尔，12 月 26 日（路透社）——韩国检方已对 10 人提起诉讼，怀疑他们将内存芯片制造技术泄露给中国芯片制造商长鑫存储科技（CXMT），当局表示此案为中国发展高带宽内存（HBM）铺平了道路，而 HBM 是人工智能计算的关键组件。首尔中央地区检察厅周二表示，包括一名前三星电子高管和工程师在内的五人因违反韩国工业技术保护法被指控并被拘留，另有五人被指控但获准保释。检方表示，一名即将离职加入 CXMT 的前三星电子研究员手动抄写了数百个专有 DRAM 制造工艺步骤，记录了涵盖设备规格、工艺顺序和产量优化的详细工艺配方。这些手写笔记后来被用于重建 CXMT 的制造流程。</p>
<p>调查还发现，CXMT 通过供应商从 SK 海力士（SK Hynix）获得了额外的 DRAM 技术，进一步加速了其发展。</p>
<p>三星电子、SK 海力士和 CXMT 均拒绝置评。</p>
<p>周二的声明未提及相关公司名称，但检方已与路透社确认了公司的名称。检方表示，泄露的技术涉及三星花费 1.6 万亿韩元开发的 10 纳米 DRAM 工艺，并补充称，当时三星是唯一商业化该技术的公司。</p>
<p>检方表示，CXMT 随后调整并验证了被盗数据以适应其设备，使其在 2023 年实现了 10 纳米 DRAM 的生产，这是中国公司取得的首次成就。</p>
<p>检方表示，非法使用该技术为 CXMT 的发展 HBM 奠定了基础，并补充称，三星电子等公司的损失预计至少达到数十万亿韩元。CXMT 计划以 420 亿美元的估值在上海上市，上个月推出了其最新一代 DRAM，称为 DDR5，直接挑战其韩国竞争对手。</p>

三星电子

半导体 3 倍做多 - Direxion

<p>韩国检方已对 10 名个人提出指控，指控他们涉嫌向中国的 CXMT 泄露内存芯片技术，助力中国的高带宽内存（HBM）发展。被指控者包括一名前三星高管和多名工程师，其中一些人已被拘留。此次泄密涉及三星的 10 纳米 DRAM 工艺，造成了重大经济损失。CXMT 计划在上海上市，并利用被盗数据在 2023 年生产 10 纳米 DRAM，给韩国公司带来了挑战</p>

<p>SEOUL, Dec 26 (Reuters) - South Korean prosecutors have indicted 10 people on suspicion of leaking memory chip manufacturing technology to Chinese chipmaker ChangXin Memory Technologies (CXMT), a case authorities say helped pave the way for China’s development of high-bandwidth memory (HBM), a critical component for artificial intelligence computing. The Seoul Central District Prosecutors’ Office said on Tuesday five people, including a former Samsung Electronics (005930.KS) executive and engineers, were charged and held in custody for violating South Korea’s industrial technology protection law, while another five were charged but allowed out on bail. Prosecutors said a former Samsung Electronics researcher who was leaving his job to join CXMT copied out hundreds of steps of proprietary DRAM manufacturing processes by hand, recording detailed process recipes covering equipment specifications, sequencing and yield optimisation. The handwritten notes were later used to reconstruct the manufacturing flow at CXMT, they said.</p>
<div class="lb-trans"><p>首尔，12 月 26 日（路透社）——韩国检方已对 10 人提起诉讼，怀疑他们将内存芯片制造技术泄露给中国芯片制造商长鑫存储科技（CXMT），当局表示此案为中国发展高带宽内存（HBM）铺平了道路，而 HBM 是人工智能计算的关键组件。首尔中央地区检察厅周二表示，包括一名前三星电子高管和工程师在内的五人因违反韩国工业技术保护法被指控并被拘留，另有五人被指控但获准保释。检方表示，一名即将离职加入 CXMT 的前三星电子研究员手动抄写了数百个专有 DRAM 制造工艺步骤，记录了涵盖设备规格、工艺顺序和产量优化的详细工艺配方。这些手写笔记后来被用于重建 CXMT 的制造流程。</p>
</div><p>The investigation also found CXMT obtained additional DRAM technology from SK Hynix (000660.KS) through a supplier, further accelerating its development.</p>
<div class="lb-trans"><p>调查还发现，CXMT 通过供应商从 SK 海力士（SK Hynix）获得了额外的 DRAM 技术，进一步加速了其发展。</p>
</div><p>Samsung Electronics, SK Hynix and CXMT declined to comment.</p>
<div class="lb-trans"><p>三星电子、SK 海力士和 CXMT 均拒绝置评。</p>
</div><p>The statement on Tuesday did not name the companies involved, but prosecutors confirmed the names of the companies separately with Reuters. The leaked technology involved 10-nanometre DRAM processes that Samsung spent 1.6 trillion won developing, prosecutors said, adding that Samsung was the only firm to have commercialised such technology at that time.</p>
<div class="lb-trans"><p>周二的声明未提及相关公司名称，但检方已与路透社确认了公司的名称。检方表示，泄露的技术涉及三星花费 1.6 万亿韩元开发的 10 纳米 DRAM 工艺，并补充称，当时三星是唯一商业化该技术的公司。</p>
</div><p>Prosecutors said CXMT subsequently adjusted and validated the stolen data to suit its own equipment, enabling it to achieve production of 10-nanometre DRAM in 2023, the first achievement by a Chinese firm.</p>
<div class="lb-trans"><p>检方表示，CXMT 随后调整并验证了被盗数据以适应其设备，使其在 2023 年实现了 10 纳米 DRAM 的生产，这是中国公司取得的首次成就。</p>
</div><p>The illegal use of the technology laid the ground for CXMT’s development of HBM, prosecutors said, adding the losses for companies such as Samsung Electronics were estimated to amount to at least tens of trillions of won. CXMT, which is eyeing a Shanghai listing at a valuation of $42 billion, last month unveiled its latest generation of DRAM, known as DDR5, in a direct challenge to its South Korean rivals.</p>
<div class="lb-trans"><p>检方表示，非法使用该技术为 CXMT 的发展 HBM 奠定了基础，并补充称，三星电子等公司的损失预计至少达到数十万亿韩元。CXMT 计划以 420 亿美元的估值在上海上市，上个月推出了其最新一代 DRAM，称为 DDR5，直接挑战其韩国竞争对手。</p>
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韩国指控 10 人涉嫌向中国 CXMT 泄露芯片技术