<p><strong>三星电子预计将在本月晚些时候开始发货其下一代高带宽内存 HBM4。根据知情的行业消息，发货预计将在春节假期后进行。</strong></p>
<p>三星电子还将成为首个商业化被广泛视为改变游戏规则的 AI 计算芯片的内存制造商，消息人士补充道。</p>
<p>该公司计划最早在二月第三周开始向 Nvidia 发货 HBM4。Nvidia 预计将在其下一代 AI 加速平台 Vera Rubin 中使用该内存。</p>
<h3>三星本月将开始 HBM4 发货</h3>
<p>这一举措标志着三星命运的转变，三星此前曾面临关于其在早期 HBM 代际中的竞争力的质疑和批评。通过 HBM4，三星旨在缩小差距，甚至超越同城竞争对手 SK 海力士，后者因 AI 数据中心需求激增而在该领域获得了早期领先。</p>
<p>根据一位行业官员的说法，这一举措为三星在科技领域所需的复苏提供了急需的支持。</p>
<p>行业消息人士还提到，作为首个大规模生产最高性能 HBM4 的公司，三星在塑造市场方面拥有明显的优势。</p>
<p>Nvidia 预计将在其年度会议 GTC 2026 上揭晓结合 HBM4 的 Vera Rubin 加速器，该会议预计将在本月晚些时候举行。三星提到，发货时间是在与 Nvidia 的产品路线图和下游系统级测试计划协调后确定的。</p>
<p>除了速度，三星对该产品的技术处理也颇具特色。从一开始，该公司就计划在 JEDEC 设定的标准上进行改进，采用行业首个将第六代 10 纳米级 DRAM（1c）工艺与通过自身边界生产的 4 纳米逻辑芯片相结合的方案。</p>
<p>因此，三星的 HBM4 每秒传输速度约为 11.7 Gbps，远高于 JEDEC 的 8 Gbps 标准。</p>
<p>这一数字也代表着相较于标准提高了 37%，相较于之前的 HMB3E 代际提高了 22%。</p>
<p>根据消息人士，单堆内存带宽达到每秒 3 TB，约为其前身的 2.4 倍。此外，它还拥有 12 高堆叠设计，支持高达 36 GB 的容量。</p>
<p>根据行业估计，未来的 16 高配置容量可能增长至 48GB。</p>
<h3>在大规模生产前预计会有进一步改进</h3>
<p>尽管采用了尖端工艺，三星在大规模生产前已能够实现稳定的良率，行业消息人士指出，随着产量的增加，预计还会有进一步的改进。</p>
<p>三星还谈到了能效，指出 HBM4 旨在最大化计算性能，同时降低能耗，帮助数据中心降低电力使用和冷却成本。</p>
<p>该公司还预计今年的 HBM 销售量将比去年增长三倍以上，并决定在其平泽校园的 4 号生产线安装额外的生产线以扩大产能。该设施预计每月将生产约 100,000 到 120,000 片用于 HBM4 产品的 1c DRAM，行业消息人士补充道。</p>
<p>去年，三星已经为 1c DRAM 工艺建立了每月约 60,000 到 70,000 片的产能。</p>
<p>随着计划的扩张，HBM4 的总 1c 产量预计将增加到每月约 200,000 片，约占三星总 DRAM 生产能力的四分之一，后者约为 780,000 片。</p>
<p>HBM4 市场预计将由三星和 SK 海力士主导，而美国的美光科技已被视为出局。根据市场追踪机构 SemiAnalysis，SK 海力士预计将占据约 70% 的 HBM4 市场，而三星将占据剩余的 30%。</p>
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英伟达

标普半导体 ETF - SPDR

三星电子

半导体 ETF - VanEck Vectors

<p>三星电子计划在农历新年后本月晚些时候开始发货其 HBM4 芯片。这款下一代高带宽内存预计将被英伟达用于其 AI 加速平台 Vera Rubin。三星旨在重新获得内存市场的竞争力，HBM4 提供 11.7 Gbps 的数据传输速度和高达每秒 3 terabytes 的内存带宽。该公司计划在今年将 HBM 销售量增加三倍，并显著扩大其在平泽工厂的生产能力</p>

<p><strong>Samsung Electronics is expected to begin shipments of its next-generation high-bandwidth memory, HBM4, later this month. According to well-informed industry sources, the shipments are expected to occur after the Lunar New Year holiday.</strong></p>
<div class="lb-trans"><p><strong>三星电子预计将在本月晚些时候开始发货其下一代高带宽内存 HBM4。根据知情的行业消息，发货预计将在春节假期后进行。</strong></p>
</div><p>Samsung Electronics is also set to become the first memory maker to commercialize what is widely seen as a game-changing chip for AI computing, the sources added.</p>
<div class="lb-trans"><p>三星电子还将成为首个商业化被广泛视为改变游戏规则的 AI 计算芯片的内存制造商，消息人士补充道。</p>
</div><p>The company has plans to start shipping HBM4 to Nvidia as early as the third week of February. Nvidia is expected to use the memory in its next-generation AI accelerator platform, Vera Rubin.</p>
<div class="lb-trans"><p>该公司计划最早在二月第三周开始向 Nvidia 发货 HBM4。Nvidia 预计将在其下一代 AI 加速平台 Vera Rubin 中使用该内存。</p>
</div><h3>Samsung set to begin HBM4 shipment this month</h3>
<div class="lb-trans"><h3>三星本月将开始 HBM4 发货</h3>
</div><p>The move signals a turn in fortune for Samsung, which had faced questions and criticisms over its competitiveness in earlier HBM generations. With the HBM4, Samsung is aiming to close the gap and even move ahead of crosstown rival SK Hynix, which had gained an early lead in the sector thanks to the surging demand from AI data centers.</p>
<div class="lb-trans"><p>这一举措标志着三星命运的转变，三星此前曾面临关于其在早期 HBM 代际中的竞争力的质疑和批评。通过 HBM4，三星旨在缩小差距，甚至超越同城竞争对手 SK 海力士，后者因 AI 数据中心需求激增而在该领域获得了早期领先。</p>
</div><p>According to an industry official, the move gives Samsung the much-needed recovery it needed in the technology sector.</p>
<div class="lb-trans"><p>根据一位行业官员的说法，这一举措为三星在科技领域所需的复苏提供了急需的支持。</p>
</div><p>The industry source also mentioned that by being the first to mass-produce the highest performance HBM4, it gives the company a clear advantage in shaping the market the way it wants.</p>
<div class="lb-trans"><p>行业消息人士还提到，作为首个大规模生产最高性能 HBM4 的公司，三星在塑造市场方面拥有明显的优势。</p>
</div><p>Nvidia is expected to unveil Vera Rubin accelerators incorporating the HBM4 at its annual conference, GTC 2026, which is expected to be held later this month. Samsung mentioned that the shipment timing was concluded after coordination with Nvidia’s product roadmap and downstream system-level testing schedules.</p>
<div class="lb-trans"><p>Nvidia 预计将在其年度会议 GTC 2026 上揭晓结合 HBM4 的 Vera Rubin 加速器，该会议预计将在本月晚些时候举行。三星提到，发货时间是在与 Nvidia 的产品路线图和下游系统级测试计划协调后确定的。</p>
</div><p>Aside from speed, Samsung’s technological approach to the product is also notable. From the onset, the company planned to improve upon the standards set by JEDEC, adopting the industry’s first combination of a sixth-generation 10-nanometer-class DRAM (1c) process with a 4-nanometer logic die produced through its own boundary.</p>
<div class="lb-trans"><p>除了速度，三星对该产品的技术处理也颇具特色。从一开始，该公司就计划在 JEDEC 设定的标准上进行改进，采用行业首个将第六代 10 纳米级 DRAM（1c）工艺与通过自身边界生产的 4 纳米逻辑芯片相结合的方案。</p>
</div><p>As a result, Samsung’s HBM4 delivers data transfer speeds of about 11.7 Gbps per second, which is well above the JEDEC’s 8 Gbps standards.</p>
<div class="lb-trans"><p>因此，三星的 HBM4 每秒传输速度约为 11.7 Gbps，远高于 JEDEC 的 8 Gbps 标准。</p>
</div><p>The figure also represents a 37% improvement over the standard and a 22% gain over the previous HMB3E generation.</p>
<div class="lb-trans"><p>这一数字也代表着相较于标准提高了 37%，相较于之前的 HMB3E 代际提高了 22%。</p>
</div><p>According to the sources, memory bandwidth per stack reaches up to 3 terabytes per second, which is about 2.4 times higher than its predecessor. In addition, it boasts a 12-high stacking design that enables a capacity of up to 36 gigabytes.</p>
<div class="lb-trans"><p>根据消息人士，单堆内存带宽达到每秒 3 TB，约为其前身的 2.4 倍。此外，它还拥有 12 高堆叠设计，支持高达 36 GB 的容量。</p>
</div><p>With its future 16-high configuration, capacity could grow as much as 48GB, the industry estimates show.</p>
<div class="lb-trans"><p>根据行业估计，未来的 16 高配置容量可能增长至 48GB。</p>
</div><h3>Further improvements are expected before mass production</h3>
<div class="lb-trans"><h3>在大规模生产前预计会有进一步改进</h3>
</div><p>Despite making use of cutting-edge processes, Samsung has been able to achieve a stable yield ahead of mass production, with further improvements expected to happen as output scales up, industry sources note.</p>
<div class="lb-trans"><p>尽管采用了尖端工艺，三星在大规模生产前已能够实现稳定的良率，行业消息人士指出，随着产量的增加，预计还会有进一步的改进。</p>
</div><p>Samsung has also talked about power efficiency, noting that HBM4 is designed to maximize computing performance while reducing energy consumption, helping data centers lower electricity use and cooling costs.</p>
<div class="lb-trans"><p>三星还谈到了能效，指出 HBM4 旨在最大化计算性能，同时降低能耗，帮助数据中心降低电力使用和冷却成本。</p>
</div><p>The company also expects its HBM sales volume this year to more than triple from last year and has decided to install additional production lines at its Pyeongtaek Campus Line 4 to expand its capacity. The facility is expected to produce roughly 100,000 to 120,000 wafers every month, dedicated to 1c DRAM used in HBM4 products, industry sources added.</p>
<div class="lb-trans"><p>该公司还预计今年的 HBM 销售量将比去年增长三倍以上，并决定在其平泽校园的 4 号生产线安装额外的生产线以扩大产能。该设施预计每月将生产约 100,000 到 120,000 片用于 HBM4 产品的 1c DRAM，行业消息人士补充道。</p>
</div><p>Last year, Samsung had already built a monthly capacity of around 60,000 to 70,000 wafers for the 1c DRAM process.</p>
<div class="lb-trans"><p>去年，三星已经为 1c DRAM 工艺建立了每月约 60,000 到 70,000 片的产能。</p>
</div><p>With the planned expansion, the total 1c output planned for HBM4 could rise to about 200,000 wafers per month, accounting for roughly a quarter of Samsung’s total DRAM production capacity of approximately 780,000 wafers.</p>
<div class="lb-trans"><p>随着计划的扩张，HBM4 的总 1c 产量预计将增加到每月约 200,000 片，约占三星总 DRAM 生产能力的四分之一，后者约为 780,000 片。</p>
</div><p>The HBM4 market is expected to be dominated by Samsung and SK hynix, with US-based Micron Technology already seen as out of the race. According to market tracker SemiAnalysis, SK hynix is expected to take about 70% of the HBM4 market, while Samsung will account for the remaining 30%.</p>
<div class="lb-trans"><p>HBM4 市场预计将由三星和 SK 海力士主导，而美国的美光科技已被视为出局。根据市场追踪机构 SemiAnalysis，SK 海力士预计将占据约 70% 的 HBM4 市场，而三星将占据剩余的 30%。</p>
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Samsung Electronics' HBM4 chip expected to begin shipping later this month

- 三星电子预计本月开始发货下一代高带宽内存 HBM4。  
- 该内存将供货给 Nvidia，用于其下一代 AI 加速平台。  
- 三星的 HBM4 数据传输速度达 11.7 Gbps，显著高于行业标准。

三星电子的 HBM4 芯片预计将在本月末开始出货