<p>新闻：光电子</p>
<p>连续波铝镓氮紫外 A 激光二极管</p>
<p>美国俄亥俄州立大学宣称首次演示了通过等离子体辅助分子束外延（PAMBE）单体生长的连续波（CW）电泵铝镓氮（AlGaN）紫外 A（UV-A，315–400nm）激光二极管 [Arnob Ghosh 等，光波技术杂志，2026 年 1 月 14 日在线发表]。</p>
<p>紫外激光二极管和 LED 正在为广泛的潜在应用进行开发：空气和水的净化、消毒、灭菌、基于荧光的生物检测、微加工以及各种生物技术过程。光电子紫外光源具有许多与紧凑尺寸、相对较高的能量效率和降低的制造成本相关的优势。应用更倾向于使用连续波而非脉冲模式操作。</p>
<p>研究人员评论道：“值得注意的是，大多数先前报告的结果是在脉冲条件下获得的，而这项工作是在连续波操作下进行的，代表了更严格和实际相关的操作条件。”</p>
<p>铝镓氮合金半导体材料的一个主要缺点是实现孔注入的困难，因为传统的镁掺杂具有低载流子浓度效率。俄亥俄州立大学的设备使用了透明的埋藏隧道结（TJ），使孔能够注入到量子阱活性区域，尽管顶部包层由 n 型 AlGaN 组成。</p>
<p>团队解释道：“该设备结构具有透明的同质结隧道结，以增强孔注入，同时采用窄脊、指数引导的非对称波导设计，显著改善光学约束，同时最小化来自基板的吸收损失。”</p>
<p>研究人员计划在未来的工作中优化设计和在低位错、高铝含量的 AlGaN 或 AlN 基板上生长，以将发射扩展到更短波长，甚至更具挑战性的 UV-B（280–315nm）和 UV-C（100–280nm）光谱区域。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f1.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f1.jpg"/></p>
<p><em>图 1：（a）设计的平面 UV-A AlGaN 激光结构的横截面示意图，以及（b）热平衡下的相应能带图。</em></p>
<p>激光二极管的外延材料是在 c 面自由立方氮化镓基板上生长的（图 1）。该结构包括一个电子阻挡层（EBL），以抑制来自活性区域的电子溢出。用于孔注入到多个量子阱（MQWs）的隧道结由薄的重掺杂 p++-型和 n++-型 AlGaN 层组成。</p>
<p>层厚度经过精心设计，以确保在 MQW 处具有高光学约束因子。特别是，设计了一个厚的底部包层，以补偿 n-GaN 基板的相对较高折射率，否则会倾向于将光学模式向下拉，从而导致基板中寄生吸收的增加。波导厚度也是考虑到这一点而选择的。</p>
<p>研究人员评论道：“这种配置有效地将光场引导远离损耗较大的 GaN 基板，并改善与量子阱的模式重叠。”</p>
<p>材料被制造成 3μm 宽的脊波导激光器。切割的腔长为 500μm。脊通过感应耦合等离子体反应离子刻蚀（ICP-RIE）刻蚀至 420nm 的深度。脊的设计旨在增强量子阱区域光场的横向约束。</p>
<p>欧姆型顶侧接触施加在 n-AlGaN 包层上，由退火的钛/铝/镍/金组成。</p>
<p>激光器还通过等离子体增强化学气相沉积（PECVD）二氧化硅进行了钝化。底部接触金属与顶部相同，在将设备薄化至 140μm 后施加。还形成了镍/金接触垫。表征测试是在没有光学涂层的未封装设备上进行的。</p>
<p>激光器在连续波操作下，在 8.5V 正向偏置下达到了 6kA/cm2 的阈值电流密度（Jth）（图 2）。总的外部微分量子效率（DEQE，ηd）为 11%。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f2.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f2.jpg"/></p>
<p><em>图 2：（a）法布里 - 佩罗激光器的光输出功率 - 电流 - 电压（L-I-V）特性，以及（b）阈值以下和以上的发射光谱，发射轮廓插图。光谱仪分辨率带宽（RBW）为 0.38nm。</em></p>
<p>团队评论道：“预计通过在光学面上加入介电镜面涂层和通过封装进行适当的热管理，ηd 将显著改善。”</p>
<p>亚阈值（85mA）峰值波长为 361nm，半高全宽（FWHM）为 8nm。阈值以上（150mA），波长为 360.3nm（0.5nm FWHM，接近分辨率极限）。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f3.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f3.jpg"/></p>
<p><em>图 3：所呈现的 CW 设备与其他报告的脉冲模式 UV-A 激光二极管的（a）阈值电流密度，（b）工作电压和（c）ηd 的基准比较。</em></p>
<p>研究人员将他们的 CW UV-A 激光二极管的性能与工程文献中脉冲模式性能的报告进行了比较（图 3）：“数据清楚地表明，这项工作实现了创纪录的低阈值电压和电流密度，主要归因于同质结 TJ 的实施和改进的腔体设计。”</p>
<p>铝镓氮紫外 A 激光二极管铝镓氮 PECVD 氮化镓基板</p>
<p>https://doi.org/10.1109/JLT.2026.3654012</p>
<p><em>作者 Mike Cooke 是一名自由技术记者，自 1997 年以来一直在半导体和先进技术领域工作。</em></p>

<p>俄亥俄州立大学展示了首个连续波（CW）AlGaN UV-A 激光二极管，采用等离子体辅助分子束外延技术。这一进展使其在空气和水净化、消毒以及生物技术等领域的应用成为可能。该设备具有透明的埋藏隧道结，以改善孔注入，并且设计上增强了光学限制。CW 操作在 8.5V 下实现了 6kA/cm² 的阈值电流密度，总的外部量子效率为 11%。未来的工作旨在优化设计以实现更短波长的紫外线</p>

<p>News: Optoelectronics</p>
<div class="lb-trans"><p>新闻：光电子</p>
</div><p>Continuous-wave AlGaN UV-A laser diode</p>
<div class="lb-trans"><p>连续波铝镓氮紫外 A 激光二极管</p>
</div><p>Ohio State University in the USA has claimed the first demonstration of continuous-wave (CW), electrically pumped aluminium gallium nitride (AlGaN) ultraviolet-A (UV-A, 315–400nm) laser diodes grown monolithically by plasma-assisted molecular beam epitaxy (PAMBE) [Arnob Ghosh et al, Journal of Lightwave Technology, published online 14 January 2026].</p>
<div class="lb-trans"><p>美国俄亥俄州立大学宣称首次演示了通过等离子体辅助分子束外延（PAMBE）单体生长的连续波（CW）电泵铝镓氮（AlGaN）紫外 A（UV-A，315–400nm）激光二极管 [Arnob Ghosh 等，光波技术杂志，2026 年 1 月 14 日在线发表]。</p>
</div><p>UV laser diodes and LEDs are being developed for a wide range of potential deployments: air and water purification, disinfection, sterilization, fluorescence-based biological detection, microfabrication, and various biotechnology processes. Optoelectronic UV sources offer many advantages related to compact size, relatively high energy efficiency, and reduced manufacturing cost. The applications prefer CW over pulsed-mode operation.</p>
<div class="lb-trans"><p>紫外激光二极管和 LED 正在为广泛的潜在应用进行开发：空气和水的净化、消毒、灭菌、基于荧光的生物检测、微加工以及各种生物技术过程。光电子紫外光源具有许多与紧凑尺寸、相对较高的能量效率和降低的制造成本相关的优势。应用更倾向于使用连续波而非脉冲模式操作。</p>
</div><p>The researchers comment: “It is worth noting that most of the previously reported results were obtained under pulsed conditions, whereas this work was performed under CW operation, representing more stringent and practically relevant operating conditions.”</p>
<div class="lb-trans"><p>研究人员评论道：“值得注意的是，大多数先前报告的结果是在脉冲条件下获得的，而这项工作是在连续波操作下进行的，代表了更严格和实际相关的操作条件。”</p>
</div><p>A leading disadvantage of AlGaN alloy semiconductor material is the difficulty in achieving hole injection, since conventional p-doping with magnesium has low carrier concentration efficiency. The OSU device used a transparent buried tunnel junction (TJ) enabling hole injection into the quantum-well active region, despite the top cladding being composed of n-type AlGaN.</p>
<div class="lb-trans"><p>铝镓氮合金半导体材料的一个主要缺点是实现孔注入的困难，因为传统的镁掺杂具有低载流子浓度效率。俄亥俄州立大学的设备使用了透明的埋藏隧道结（TJ），使孔能够注入到量子阱活性区域，尽管顶部包层由 n 型 AlGaN 组成。</p>
</div><p>The team explains: “The device structure features a transparent homojunction tunnel junction to enhance hole injection, along with a narrow-ridge, index-guided asymmetric waveguide design that significantly improves optical confinement while minimizing absorption losses from the substrate.”</p>
<div class="lb-trans"><p>团队解释道：“该设备结构具有透明的同质结隧道结，以增强孔注入，同时采用窄脊、指数引导的非对称波导设计，显著改善光学约束，同时最小化来自基板的吸收损失。”</p>
</div><p>The researchers plan in future work to optimize design and growth on low-dislocation, high-Al-content AlGaN or AlN substrates to extend emission into the shorter-wavelength, and even more challenging, UV-B (280–315nm) and UV-C (100–280nm) spectral regions.</p>
<div class="lb-trans"><p>研究人员计划在未来的工作中优化设计和在低位错、高铝含量的 AlGaN 或 AlN 基板上生长，以将发射扩展到更短波长，甚至更具挑战性的 UV-B（280–315nm）和 UV-C（100–280nm）光谱区域。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f1.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f1.jpg"/></p>
<p><em>Figure 1: (a) Cross-sectional schematic of designed planar UV-A AlGaN laser structure, and (b) corresponding energy-band diagram in thermal equilibrium.</em></p>
<div class="lb-trans"><p><em>图 1：（a）设计的平面 UV-A AlGaN 激光结构的横截面示意图，以及（b）热平衡下的相应能带图。</em></p>
</div><p>The epitaxial material for the laser diode was grown on c-plane free-standing GaN substrates (Figure 1). The structure included an electron-blocking layer (EBL) to suppress electron overflow from the active region. The tunnel junction for hole injection into the multiple quantum wells (MQWs) consisted of thin heavily doped layers of p++- and n++-type AlGaN.</p>
<div class="lb-trans"><p>激光二极管的外延材料是在 c 面自由立方氮化镓基板上生长的（图 1）。该结构包括一个电子阻挡层（EBL），以抑制来自活性区域的电子溢出。用于孔注入到多个量子阱（MQWs）的隧道结由薄的重掺杂 p++-型和 n++-型 AlGaN 层组成。</p>
</div><p>The layer thicknesses were carefully designed to ensure a high optical confinement factor at the MQW. In particular, a thick bottom cladding was designed to compensate for the relatively high refractive index of the n-GaN substrate, which otherwise would tend to pull the optical mode downward, resulting in increased parasitic absorption in the substrate. The waveguide thicknesses were also chosen with this in mind.</p>
<div class="lb-trans"><p>层厚度经过精心设计，以确保在 MQW 处具有高光学约束因子。特别是，设计了一个厚的底部包层，以补偿 n-GaN 基板的相对较高折射率，否则会倾向于将光学模式向下拉，从而导致基板中寄生吸收的增加。波导厚度也是考虑到这一点而选择的。</p>
</div><p>The researchers comment: “This configuration effectively redirects the optical field away from the lossy GaN substrate and improves mode overlap with the QWs.”</p>
<div class="lb-trans"><p>研究人员评论道：“这种配置有效地将光场引导远离损耗较大的 GaN 基板，并改善与量子阱的模式重叠。”</p>
</div><p>The material was fabricated into 3μm-wide ridge waveguide lasers. The cleaved cavity length was 500μm. The ridge was formed by inductively coupled plasma reactive-ion etching (ICP-RIE) to a depth of 420nm. The ridge was designed to enhance lateral confinement of the optical field in the QW region.</p>
<div class="lb-trans"><p>材料被制造成 3μm 宽的脊波导激光器。切割的腔长为 500μm。脊通过感应耦合等离子体反应离子刻蚀（ICP-RIE）刻蚀至 420nm 的深度。脊的设计旨在增强量子阱区域光场的横向约束。</p>
</div><p>The ohmic top-side contacts were applied to the n-AlGaN cladding, consisting of annealed titanium/aluminium/nickel/gold.</p>
<div class="lb-trans"><p>欧姆型顶侧接触施加在 n-AlGaN 包层上，由退火的钛/铝/镍/金组成。</p>
</div><p>The lasers were also passivated with plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide. The bottom contact metals were the same as for the top side, applied after thinning the device to 140μm. Nickel/gold contact pads were also formed. The characterization tests were on unpackaged devices without optical coatings of the facets.</p>
<div class="lb-trans"><p>激光器还通过等离子体增强化学气相沉积（PECVD）二氧化硅进行了钝化。底部接触金属与顶部相同，在将设备薄化至 140μm 后施加。还形成了镍/金接触垫。表征测试是在没有光学涂层的未封装设备上进行的。</p>
</div><p>The lasers, in CW operation, achieved 6kA/cm2 threshold current density (Jth) at 8.5V forward bias (Figure 2). The total differential external quantum efficiency (DEQE, ηd) was 11%.</p>
<div class="lb-trans"><p>激光器在连续波操作下，在 8.5V 正向偏置下达到了 6kA/cm2 的阈值电流密度（Jth）（图 2）。总的外部微分量子效率（DEQE，ηd）为 11%。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f2.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f2.jpg"/></p>
<p><em>Figure 2: (a) Light output power–current–voltage (L-I-V) characteristics of Fabry–Pérot laser, and (b) emission spectra at below- and above-threshold with emission profile inset. Spectrometer resolution bandwidth (RBW) was 0.38nm.</em></p>
<div class="lb-trans"><p><em>图 2：（a）法布里 - 佩罗激光器的光输出功率 - 电流 - 电压（L-I-V）特性，以及（b）阈值以下和以上的发射光谱，发射轮廓插图。光谱仪分辨率带宽（RBW）为 0.38nm。</em></p>
</div><p>The team comments: “The ηd is expected to improve significantly with the incorporation of dielectric mirror coating on the facets and proper thermal management via packaging.”</p>
<div class="lb-trans"><p>团队评论道：“预计通过在光学面上加入介电镜面涂层和通过封装进行适当的热管理，ηd 将显著改善。”</p>
</div><p>The subthreshold (85mA) peak wavelength was 361nm with 8nm full-width at half maximum (FWHM). Above threshold (150mA), the wavelength was 360.3nm (0.5nm FWHM, close to resolution limit).</p>
<div class="lb-trans"><p>亚阈值（85mA）峰值波长为 361nm，半高全宽（FWHM）为 8nm。阈值以上（150mA），波长为 360.3nm（0.5nm FWHM，接近分辨率极限）。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f3.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2026/feb/26012_ohiostate_f3.jpg"/></p>
<p><em>Figure 3: Benchmark comparisons of (a) threshold current density, (b) operating voltage and (c) ηd of presented CW device with other reported UV-A laser diodes under pulsed-mode operation.</em></p>
<div class="lb-trans"><p><em>图 3：所呈现的 CW 设备与其他报告的脉冲模式 UV-A 激光二极管的（a）阈值电流密度，（b）工作电压和（c）ηd 的基准比较。</em></p>
</div><p>The researchers compared the performance of their CW UV-A laser diode with reports of pulse-mode performance in the engineering literature (Figure 3): “The data clearly demonstrate that this work achieved a record low threshold voltage and current density, primarily attributed to the implementation of a homojunction TJ and an improved cavity design.”</p>
<div class="lb-trans"><p>研究人员将他们的 CW UV-A 激光二极管的性能与工程文献中脉冲模式性能的报告进行了比较（图 3）：“数据清楚地表明，这项工作实现了创纪录的低阈值电压和电流密度，主要归因于同质结 TJ 的实施和改进的腔体设计。”</p>
</div><p>AlGaN UV-A laser diode AlGaN PECVD GaN substrate</p>
<div class="lb-trans"><p>铝镓氮紫外 A 激光二极管铝镓氮 PECVD 氮化镓基板</p>
</div><p>https://doi.org/10.1109/JLT.2026.3654012</p>
<div class="lb-trans"><p>https://doi.org/10.1109/JLT.2026.3654012</p>
</div><p><em>The author Mike Cooke is a freelance technology journalist who has worked in the semiconductor and advanced technology sectors since 1997.</em></p>
<div class="lb-trans"><p><em>作者 Mike Cooke 是一名自由技术记者，自 1997 年以来一直在半导体和先进技术领域工作。</em></p>
</div>

连续波 AlGaN 紫外 A 类激光二极管