<p>新聞：微電子</p>
<p>英飛凌推出 CoolSiC MOSFETs 1200V G2 Q-DPAK 封裝</p>
<p>德國慕尼黑的英飛凌科技公司推出了 CoolSiC MOSFETs 1200V G2，採用頂側冷卻（TSC）Q-DPAK 封裝。新設備據稱提供了優化的熱性能、系統效率和功率密度，專為需要高性能和可靠性的苛刻工業應用而設計，如電動車充電器、太陽能逆變器、不間斷電源、馬達驅動和固態斷路器。</p>
<p>新的 CoolSiC 1200V G2 技術相比於前一代產品有顯著改進，使得等效 RDS(on) 器件的開關損耗降低多達 25%，系統效率提高最多 0.1%。利用英飛凌改進的.XT 芯片連接技術，G2 器件的熱阻降低超過 15%，MOSFET 温度相比 G1 系列產品降低 11%。RDS(on) 值範圍從 4mΩ到 78mΩ，加上廣泛的產品組合，使設計師能夠靈活優化其目標應用的系統性能。此外，新技術支持在結温（Tvj）高達 200°C 的過載操作，並具有對寄生開啓的高魯棒性，確保在動態和苛刻條件下的可靠運行。</p>
<p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg"/></p>
<p><em>圖片：CoolSiC MOSFETs 1200V G2 在頂側冷卻的 Q-DPAK 封裝中。</em></p>
<p>CoolSiC MOSFETs 1200V G2 提供兩種 Q-DPAK 配置：單開關和雙半橋。兩種變體都是英飛凌更廣泛的 X-DPAK 頂側冷卻平台的一部分。所有 TSC 變體（包括 Q-DPAK 和 TOLT）具有標準化的封裝高度 2.3mm，該平台提供設計靈活性，使客户能夠在單個散熱器組件下擴展和組合不同的產品。這種設計靈活性簡化了先進電力系統的開發，使客户更容易定製和擴展其解決方案。</p>
<p>Q-DPAK 封裝通過使設備的頂部表面直接散熱到散熱器來增強熱性能。這種直接熱路徑提供的熱傳導效率顯著優於傳統的底側冷卻封裝，從而實現更緊湊的設計。此外，Q-DPAK 封裝佈局設計允許最小化寄生電感，這對更高的開關速度至關重要。這增強了系統效率並降低了電壓過沖風險。該封裝的小型佔地面積支持緊湊的系統設計，同時與自動化組裝過程的兼容性簡化了製造，確保了成本效率和可擴展性。</p>
<p>CoolSiC MOSFET 1200V G2 的 Q-DPAK 單開關和雙半橋封裝變體現已上市。</p>
<p>英飛凌將 Q-DPAK 和 TOLL 封裝添加到工業 CoolSiC MOSFETs 650V G2 系列中</p>
<p>英飛凌推出 CoolSiC MOSFET 第二代</p>
<p>英飛凌推出新一代 1200V CoolSiC 溝槽 MOSFET，採用 TO263-7 封裝</p>
<p>英飛凌</p>
<p>www.infineon.com/coolsic</p>

英飛凌(ADR)

<p>英飛凌 (ADR) 推出了 CoolSiC MOSFETs 1200V G2，採用 Q-DPAK 封裝，專為電動汽車充電器和太陽能逆變器等高性能工業應用設計。這款新設備提供了優化的熱性能、系統效率和功率密度，開關損耗降低了多達 25%，並改善了熱阻。Q-DPAK 封裝提供單開關和雙半橋配置，增強了散熱性能，支持緊湊設計，簡化了先進電力系統的開發。CoolSiC MOSFET 1200V G2 現已向客户提供</p>

<p>News: Microelectronics</p>
<div class="lb-trans"><p>新聞：微電子</p>
</div><p>Infineon launches CoolSiC MOSFETs 1200V G2 in Q-DPAK package</p>
<div class="lb-trans"><p>英飛凌推出 CoolSiC MOSFETs 1200V G2 Q-DPAK 封裝</p>
</div><p>Infineon Technologies AG Munich, Germany has launched the CoolSiC MOSFETs 1200V G2 in a top-side-cooled (TSC) Q-DPAK package. Delivering what is said to be optimized thermal performance, system efficiency and power density, the new devices were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers.</p>
<div class="lb-trans"><p>德國慕尼黑的英飛凌科技公司推出了 CoolSiC MOSFETs 1200V G2，採用頂側冷卻（TSC）Q-DPAK 封裝。新設備據稱提供了優化的熱性能、系統效率和功率密度，專為需要高性能和可靠性的苛刻工業應用而設計，如電動車充電器、太陽能逆變器、不間斷電源、馬達驅動和固態斷路器。</p>
</div><p>The new CoolSiC 1200V G2 technology offers significant improvements over the previous generation, enabling up to 25% lower switching losses for equivalent RDS(on) devices, increasing system efficiency by up to 0.1%. Utilizing Infineon’s improved .XT die attach interconnection technology, the G2 devices achieve more than 15% lower thermal resistance and an 11% reduction in MOSFET temperature compared with G1 family products. RDS(on) values ranging from 4mΩ to 78mΩ, along with a broad product portfolio, enable designers the flexibility to optimize system performance for their target applications. Furthermore, the new technology supports overload operation up to a junction temperature (Tvj) of 200°C and features high robustness against parasitic turn-on, ensuring reliable operation under dynamic and demanding conditions.</p>
<div class="lb-trans"><p>新的 CoolSiC 1200V G2 技術相比於前一代產品有顯著改進，使得等效 RDS(on) 器件的開關損耗降低多達 25%，系統效率提高最多 0.1%。利用英飛凌改進的.XT 芯片連接技術，G2 器件的熱阻降低超過 15%，MOSFET 温度相比 G1 系列產品降低 11%。RDS(on) 值範圍從 4mΩ到 78mΩ，加上廣泛的產品組合，使設計師能夠靈活優化其目標應用的系統性能。此外，新技術支持在結温（Tvj）高達 200°C 的過載操作，並具有對寄生開啓的高魯棒性，確保在動態和苛刻條件下的可靠運行。</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/jul/coolsic-mosfet-1200v-g2-q-dpak-hdsop-22-3.jpg"/></p>
<p><em>Picture: The CoolSiC MOSFETs 1200V G2 in a top-side-cooled Q-DPAK package.</em></p>
<div class="lb-trans"><p><em>圖片：CoolSiC MOSFETs 1200V G2 在頂側冷卻的 Q-DPAK 封裝中。</em></p>
</div><p>The CoolSiC MOSFETs 1200V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side-cooling platform. With a standardized package height of 2.3mm across all TSC variants – including Q-DPAK and TOLT – the platform offers design flexibility and enables customers to scale and combine different products under a single heatsink assembly. This design flexibility simplifies advanced power system development, making it easier for customers to customize and scale their solutions.</p>
<div class="lb-trans"><p>CoolSiC MOSFETs 1200V G2 提供兩種 Q-DPAK 配置：單開關和雙半橋。兩種變體都是英飛凌更廣泛的 X-DPAK 頂側冷卻平台的一部分。所有 TSC 變體（包括 Q-DPAK 和 TOLT）具有標準化的封裝高度 2.3mm，該平台提供設計靈活性，使客户能夠在單個散熱器組件下擴展和組合不同的產品。這種設計靈活性簡化了先進電力系統的開發，使客户更容易定製和擴展其解決方案。</p>
</div><p>The Q-DPAK package enhances thermal performance by enabling direct heat dissipation from the device’s top surface to the heatsink. This direct thermal path delivers significantly better heat transfer efficiency than traditional bottom-side-cooled packages, enabling more compact designs. Additionally, the Q-DPAK package layout design allows for minimized parasitic inductance, which is critical for higher switching speeds. This enhances system efficiency and reduces voltage overshoot risk. The small footprint of the package supports compact system designs, while its compatibility with automated assembly processes simplifies manufacturing, ensuring cost efficiency and scalability.</p>
<div class="lb-trans"><p>Q-DPAK 封裝通過使設備的頂部表面直接散熱到散熱器來增強熱性能。這種直接熱路徑提供的熱傳導效率顯著優於傳統的底側冷卻封裝，從而實現更緊湊的設計。此外，Q-DPAK 封裝佈局設計允許最小化寄生電感，這對更高的開關速度至關重要。這增強了系統效率並降低了電壓過沖風險。該封裝的小型佔地面積支持緊湊的系統設計，同時與自動化組裝過程的兼容性簡化了製造，確保了成本效率和可擴展性。</p>
</div><p>The CoolSiC MOSFET 1200V G2 in Q-DPAK single switch and dual half-bridge package variants are available now.</p>
<div class="lb-trans"><p>CoolSiC MOSFET 1200V G2 的 Q-DPAK 單開關和雙半橋封裝變體現已上市。</p>
</div><p>Infineon adds Q-DPAK and TOLL packages to industrial CoolSiC MOSFETs 650V G2 range</p>
<div class="lb-trans"><p>英飛凌將 Q-DPAK 和 TOLL 封裝添加到工業 CoolSiC MOSFETs 650V G2 系列中</p>
</div><p>Infineon launches CoolSiC MOSFET Generation 2</p>
<div class="lb-trans"><p>英飛凌推出 CoolSiC MOSFET 第二代</p>
</div><p>Infineon makes available new-generation 1200V CoolSiC trench MOSFET in TO263-7 package</p>
<div class="lb-trans"><p>英飛凌推出新一代 1200V CoolSiC 溝槽 MOSFET，採用 TO263-7 封裝</p>
</div><p>Infineon</p>
<div class="lb-trans"><p>英飛凌</p>
</div><p>www.infineon.com/coolsic</p>
<div class="lb-trans"><p>www.infineon.com/coolsic</p>
</div>

英飛凌推出 CoolSiC MOSFETs 1200V G2，採用 Q-DPAK 封裝