<p>新聞：微電子</p>
<p>英飛凌與羅姆合作開發碳化硅功率電子封裝</p>
<p>德國慕尼黑的英飛凌科技股份公司與日本京都的羅姆株式會社簽署了一份諒解備忘錄，合作開發用於車載充電器、光伏、能源存儲系統和人工智能數據中心等應用的碳化硅（SiC）功率半導體封裝。具體而言，雙方旨在使彼此成為 SiC 功率器件選定封裝的第二來源，從而提高客户的設計和採購靈活性。未來，客户將能夠從英飛凌和羅姆兩家公司採購具有兼容外殼的器件。這一合作將確保無縫兼容和可互換，以滿足特定客户需求。</p>
<p>“我們的合作將為客户提供更廣泛的選擇和更大的設計與採購靈活性，使他們能夠開發出更高能效的應用，進一步推動脱碳進程，” 英飛凌綠色工業電力部門總裁彼得·瓦爾維爾博士表示。</p>
<p>“通過合作，我們可以推動創新，減少複雜性，提高客户滿意度，最終塑造功率電子行業的未來，” 羅姆功率器件業務董事會成員兼執行官井野和秀博士表示。</p>
<p><em><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" width="300" height="296" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg"/></em></p>
<p><em>圖片：左：英飛凌綠色工業電力部門總裁彼得·瓦爾維爾博士；右：羅姆功率器件業務董事會成員兼執行官井野和秀博士。</em></p>
<p>根據協議，羅姆將採用英飛凌的碳化硅頂側冷卻平台，包括 TOLT、D-DPAK、Q-DPAK、Q-DPAK 雙重和 H-DPAK 封裝。英飛凌的頂側冷卻平台提供多個優勢，包括所有封裝標準高度為 2.3mm。這有助於設計並降低冷卻系統成本，同時還提高了電路板空間利用率，功率密度可提高至兩倍。</p>
<p>與此同時，英飛凌將採用羅姆的 DOT-247 封裝，採用 SiC 半橋配置，以開發兼容封裝。這將擴展英飛凌最近宣佈的雙 TO-247 IGBT 產品組合，以包括 SiC 半橋解決方案。羅姆的 DOT-247 相比標準分立封裝提供更高的功率密度，並減少組裝工作。其獨特結構集成了兩個 TO-247 封裝，使熱阻降低約 15%，電感降低 50%。這些優勢使其功率密度比 TO-247 高出 2.3 倍。</p>
<p>英飛凌與羅姆計劃在未來擴大合作，涵蓋其他硅基和寬禁帶功率技術的封裝，如 SiC 和氮化鎵（GaN）。這預計將進一步加強兩家公司之間的關係，併為客户提供更廣泛的解決方案和採購選擇。</p>
<p>基於 SiC 的半導體通過更高效地切換電力，提高了高功率應用的性能，確保在極端條件下的高可靠性和穩健性，同時允許更小的設計。使用英飛凌和羅姆的 SiC 產品，客户可以開發出高能效的解決方案，並提高電動汽車充電、可再生能源系統和人工智能數據中心等應用的功率密度。</p>
<p>羅姆推出 DOT-247 2 合 1 SiC 模塑模塊</p>
<p>英飛凌羅姆 SiC 功率模塊</p>
<p>www.rohm.com/products/sic-power-devices</p>
<p>www.infineon.com</p>

英飛凌(ADR)

半導體 3 倍做多 - Direxion

<p>英飛凌科技股份公司與羅姆株式會社簽署了一份諒解備忘錄，旨在合作開發碳化硅（SiC）功率半導體封裝。此次合作旨在通過允許客户從兩家公司採購，增強設計和採購的靈活性。該合作將利用英飛凌的頂側冷卻平台和羅姆的 DOT-247 封裝，提高功率密度並降低成本。未來的擴展可能包括更多的封裝和技術，進一步增強客户在節能應用中的選擇</p>

<p>News: Microelectronics</p>
<div class="lb-trans"><p>新聞：微電子</p>
</div><p>Infineon and ROHM collaborating on silicon carbide power electronics packages</p>
<div class="lb-trans"><p>英飛凌與羅姆合作開發碳化硅功率電子封裝</p>
</div><p>Infineon Technologies AG of Munich, Germany and ROHM Co Ltd of Kyoto, Japan have signed a memorandum of understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, which should increase design and procurement flexibility for customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration should ensure seamless compatibility and interchangeability to match specific customer needs.</p>
<div class="lb-trans"><p>德國慕尼黑的英飛凌科技股份公司與日本京都的羅姆株式會社簽署了一份諒解備忘錄，合作開發用於車載充電器、光伏、能源存儲系統和人工智能數據中心等應用的碳化硅（SiC）功率半導體封裝。具體而言，雙方旨在使彼此成為 SiC 功率器件選定封裝的第二來源，從而提高客户的設計和採購靈活性。未來，客户將能夠從英飛凌和羅姆兩家公司採購具有兼容外殼的器件。這一合作將確保無縫兼容和可互換，以滿足特定客户需求。</p>
</div><p>“Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization,” says Dr Peter Wawer, division president Green Industrial Power at Infineon.</p>
<div class="lb-trans"><p>“我們的合作將為客户提供更廣泛的選擇和更大的設計與採購靈活性，使他們能夠開發出更高能效的應用，進一步推動脱碳進程，” 英飛凌綠色工業電力部門總裁彼得·瓦爾維爾博士表示。</p>
</div><p>“By working together, we can drive innovation, reduce complexity and increase customer satisfaction, ultimately shaping the future of the power electronics industry,” says Dr Kazuhide Ino, board member and managing executive officer in charge of Power Devices Business at ROHM.</p>
<div class="lb-trans"><p>“通過合作，我們可以推動創新，減少複雜性，提高客户滿意度，最終塑造功率電子行業的未來，” 羅姆功率器件業務董事會成員兼執行官井野和秀博士表示。</p>
</div><p><em><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg"/></em></p>
<div class="lb-trans"><p><em><img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg" alt="" original-src="https://semiconductor-today.com/news_items/2025/sep/mou-infineon-rohm.jpg"/></em></p>
</div><p><em>Picture: Left: Dr Peter Wawer (division president Green Industrial Power at Infineon); right: Dr Kazuhide Ino (board member &amp; managing executive officer, in charge of Power Devices Business at ROHM).</em></p>
<div class="lb-trans"><p><em>圖片：左：英飛凌綠色工業電力部門總裁彼得·瓦爾維爾博士；右：羅姆功率器件業務董事會成員兼執行官井野和秀博士。</em></p>
</div><p>As part of the agreement, ROHM will adopt Infineon’s top-side-cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side-cooling platform offers several benefits, including a standardized height of 2.3mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.</p>
<div class="lb-trans"><p>根據協議，羅姆將採用英飛凌的碳化硅頂側冷卻平台，包括 TOLT、D-DPAK、Q-DPAK、Q-DPAK 雙重和 H-DPAK 封裝。英飛凌的頂側冷卻平台提供多個優勢，包括所有封裝標準高度為 2.3mm。這有助於設計並降低冷卻系統成本，同時還提高了電路板空間利用率，功率密度可提高至兩倍。</p>
</div><p>At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared with standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables the reduction of thermal resistance by about 15% and inductance by 50% compared with the TO-247. The advantages bring 2.3 times higher power density than the TO-247.</p>
<div class="lb-trans"><p>與此同時，英飛凌將採用羅姆的 DOT-247 封裝，採用 SiC 半橋配置，以開發兼容封裝。這將擴展英飛凌最近宣佈的雙 TO-247 IGBT 產品組合，以包括 SiC 半橋解決方案。羅姆的 DOT-247 相比標準分立封裝提供更高的功率密度，並減少組裝工作。其獨特結構集成了兩個 TO-247 封裝，使熱阻降低約 15%，電感降低 50%。這些優勢使其功率密度比 TO-247 高出 2.3 倍。</p>
</div><p>Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This is expected to further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.</p>
<div class="lb-trans"><p>英飛凌與羅姆計劃在未來擴大合作，涵蓋其他硅基和寬禁帶功率技術的封裝，如 SiC 和氮化鎵（GaN）。這預計將進一步加強兩家公司之間的關係，併為客户提供更廣泛的解決方案和採購選擇。</p>
</div><p>Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using Infineon’s and ROHM’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.</p>
<div class="lb-trans"><p>基於 SiC 的半導體通過更高效地切換電力，提高了高功率應用的性能，確保在極端條件下的高可靠性和穩健性，同時允許更小的設計。使用英飛凌和羅姆的 SiC 產品，客户可以開發出高能效的解決方案，並提高電動汽車充電、可再生能源系統和人工智能數據中心等應用的功率密度。</p>
</div><p>ROHM launches DOT-247 2-in-1 SiC molded module</p>
<div class="lb-trans"><p>羅姆推出 DOT-247 2 合 1 SiC 模塑模塊</p>
</div><p>InfineonRohmSiC power modules</p>
<div class="lb-trans"><p>英飛凌羅姆 SiC 功率模塊</p>
</div><p>www.rohm.com/products/sic-power-devices</p>
<div class="lb-trans"><p>www.rohm.com/products/sic-power-devices</p>
</div><p>www.infineon.com</p>
<div class="lb-trans"><p>www.infineon.com</p>
</div>

英飛凌和 ROHM 正在合作開發碳化硅功率電子封裝