<p><strong>三星電子預計將在本月晚些時候開始發貨其下一代高帶寬內存 HBM4。根據知情的行業消息，發貨預計將在春節假期後進行。</strong></p>
<p>三星電子還將成為首個商業化被廣泛視為改變遊戲規則的 AI 計算芯片的內存製造商，消息人士補充道。</p>
<p>該公司計劃最早在二月第三週開始向 Nvidia 發貨 HBM4。Nvidia 預計將在其下一代 AI 加速平台 Vera Rubin 中使用該內存。</p>
<h3>三星本月將開始 HBM4 發貨</h3>
<p>這一舉措標誌着三星命運的轉變，三星此前曾面臨關於其在早期 HBM 代際中的競爭力的質疑和批評。通過 HBM4，三星旨在縮小差距，甚至超越同城競爭對手 SK 海力士，後者因 AI 數據中心需求激增而在該領域獲得了早期領先。</p>
<p>根據一位行業官員的説法，這一舉措為三星在科技領域所需的復甦提供了急需的支持。</p>
<p>行業消息人士還提到，作為首個大規模生產最高性能 HBM4 的公司，三星在塑造市場方面擁有明顯的優勢。</p>
<p>Nvidia 預計將在其年度會議 GTC 2026 上揭曉結合 HBM4 的 Vera Rubin 加速器，該會議預計將在本月晚些時候舉行。三星提到，發貨時間是在與 Nvidia 的產品路線圖和下游系統級測試計劃協調後確定的。</p>
<p>除了速度，三星對該產品的技術處理也頗具特色。從一開始，該公司就計劃在 JEDEC 設定的標準上進行改進，採用行業首個將第六代 10 納米級 DRAM（1c）工藝與通過自身邊界生產的 4 納米邏輯芯片相結合的方案。</p>
<p>因此，三星的 HBM4 每秒傳輸速度約為 11.7 Gbps，遠高於 JEDEC 的 8 Gbps 標準。</p>
<p>這一數字也代表着相較於標準提高了 37%，相較於之前的 HMB3E 代際提高了 22%。</p>
<p>根據消息人士，單堆內存帶寬達到每秒 3 TB，約為其前身的 2.4 倍。此外，它還擁有 12 高堆疊設計，支持高達 36 GB 的容量。</p>
<p>根據行業估計，未來的 16 高配置容量可能增長至 48GB。</p>
<h3>在大規模生產前預計會有進一步改進</h3>
<p>儘管採用了尖端工藝，三星在大規模生產前已能夠實現穩定的良率，行業消息人士指出，隨着產量的增加，預計還會有進一步的改進。</p>
<p>三星還談到了能效，指出 HBM4 旨在最大化計算性能，同時降低能耗，幫助數據中心降低電力使用和冷卻成本。</p>
<p>該公司還預計今年的 HBM 銷售量將比去年增長三倍以上，並決定在其平澤校園的 4 號生產線安裝額外的生產線以擴大產能。該設施預計每月將生產約 100,000 到 120,000 片用於 HBM4 產品的 1c DRAM，行業消息人士補充道。</p>
<p>去年，三星已經為 1c DRAM 工藝建立了每月約 60,000 到 70,000 片的產能。</p>
<p>隨着計劃的擴張，HBM4 的總 1c 產量預計將增加到每月約 200,000 片，約佔三星總 DRAM 生產能力的四分之一，後者約為 780,000 片。</p>
<p>HBM4 市場預計將由三星和 SK 海力士主導，而美國的美光科技已被視為出局。根據市場追蹤機構 SemiAnalysis，SK 海力士預計將佔據約 70% 的 HBM4 市場，而三星將佔據剩餘的 30%。</p>
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英偉達

標普半導體 ETF - SPDR

三星電子

半導體 ETF - VanEck Vectors

<p>三星電子計劃在農曆新年後本月晚些時候開始發貨其 HBM4 芯片。這款下一代高帶寬內存預計將被英偉達用於其 AI 加速平台 Vera Rubin。三星旨在重新獲得內存市場的競爭力，HBM4 提供 11.7 Gbps 的數據傳輸速度和高達每秒 3 terabytes 的內存帶寬。該公司計劃在今年將 HBM 銷售量增加三倍，並顯著擴大其在平澤工廠的生產能力</p>

<p><strong>Samsung Electronics is expected to begin shipments of its next-generation high-bandwidth memory, HBM4, later this month. According to well-informed industry sources, the shipments are expected to occur after the Lunar New Year holiday.</strong></p>
<div class="lb-trans"><p><strong>三星電子預計將在本月晚些時候開始發貨其下一代高帶寬內存 HBM4。根據知情的行業消息，發貨預計將在春節假期後進行。</strong></p>
</div><p>Samsung Electronics is also set to become the first memory maker to commercialize what is widely seen as a game-changing chip for AI computing, the sources added.</p>
<div class="lb-trans"><p>三星電子還將成為首個商業化被廣泛視為改變遊戲規則的 AI 計算芯片的內存製造商，消息人士補充道。</p>
</div><p>The company has plans to start shipping HBM4 to Nvidia as early as the third week of February. Nvidia is expected to use the memory in its next-generation AI accelerator platform, Vera Rubin.</p>
<div class="lb-trans"><p>該公司計劃最早在二月第三週開始向 Nvidia 發貨 HBM4。Nvidia 預計將在其下一代 AI 加速平台 Vera Rubin 中使用該內存。</p>
</div><h3>Samsung set to begin HBM4 shipment this month</h3>
<div class="lb-trans"><h3>三星本月將開始 HBM4 發貨</h3>
</div><p>The move signals a turn in fortune for Samsung, which had faced questions and criticisms over its competitiveness in earlier HBM generations. With the HBM4, Samsung is aiming to close the gap and even move ahead of crosstown rival SK Hynix, which had gained an early lead in the sector thanks to the surging demand from AI data centers.</p>
<div class="lb-trans"><p>這一舉措標誌着三星命運的轉變，三星此前曾面臨關於其在早期 HBM 代際中的競爭力的質疑和批評。通過 HBM4，三星旨在縮小差距，甚至超越同城競爭對手 SK 海力士，後者因 AI 數據中心需求激增而在該領域獲得了早期領先。</p>
</div><p>According to an industry official, the move gives Samsung the much-needed recovery it needed in the technology sector.</p>
<div class="lb-trans"><p>根據一位行業官員的説法，這一舉措為三星在科技領域所需的復甦提供了急需的支持。</p>
</div><p>The industry source also mentioned that by being the first to mass-produce the highest performance HBM4, it gives the company a clear advantage in shaping the market the way it wants.</p>
<div class="lb-trans"><p>行業消息人士還提到，作為首個大規模生產最高性能 HBM4 的公司，三星在塑造市場方面擁有明顯的優勢。</p>
</div><p>Nvidia is expected to unveil Vera Rubin accelerators incorporating the HBM4 at its annual conference, GTC 2026, which is expected to be held later this month. Samsung mentioned that the shipment timing was concluded after coordination with Nvidia’s product roadmap and downstream system-level testing schedules.</p>
<div class="lb-trans"><p>Nvidia 預計將在其年度會議 GTC 2026 上揭曉結合 HBM4 的 Vera Rubin 加速器，該會議預計將在本月晚些時候舉行。三星提到，發貨時間是在與 Nvidia 的產品路線圖和下游系統級測試計劃協調後確定的。</p>
</div><p>Aside from speed, Samsung’s technological approach to the product is also notable. From the onset, the company planned to improve upon the standards set by JEDEC, adopting the industry’s first combination of a sixth-generation 10-nanometer-class DRAM (1c) process with a 4-nanometer logic die produced through its own boundary.</p>
<div class="lb-trans"><p>除了速度，三星對該產品的技術處理也頗具特色。從一開始，該公司就計劃在 JEDEC 設定的標準上進行改進，採用行業首個將第六代 10 納米級 DRAM（1c）工藝與通過自身邊界生產的 4 納米邏輯芯片相結合的方案。</p>
</div><p>As a result, Samsung’s HBM4 delivers data transfer speeds of about 11.7 Gbps per second, which is well above the JEDEC’s 8 Gbps standards.</p>
<div class="lb-trans"><p>因此，三星的 HBM4 每秒傳輸速度約為 11.7 Gbps，遠高於 JEDEC 的 8 Gbps 標準。</p>
</div><p>The figure also represents a 37% improvement over the standard and a 22% gain over the previous HMB3E generation.</p>
<div class="lb-trans"><p>這一數字也代表着相較於標準提高了 37%，相較於之前的 HMB3E 代際提高了 22%。</p>
</div><p>According to the sources, memory bandwidth per stack reaches up to 3 terabytes per second, which is about 2.4 times higher than its predecessor. In addition, it boasts a 12-high stacking design that enables a capacity of up to 36 gigabytes.</p>
<div class="lb-trans"><p>根據消息人士，單堆內存帶寬達到每秒 3 TB，約為其前身的 2.4 倍。此外，它還擁有 12 高堆疊設計，支持高達 36 GB 的容量。</p>
</div><p>With its future 16-high configuration, capacity could grow as much as 48GB, the industry estimates show.</p>
<div class="lb-trans"><p>根據行業估計，未來的 16 高配置容量可能增長至 48GB。</p>
</div><h3>Further improvements are expected before mass production</h3>
<div class="lb-trans"><h3>在大規模生產前預計會有進一步改進</h3>
</div><p>Despite making use of cutting-edge processes, Samsung has been able to achieve a stable yield ahead of mass production, with further improvements expected to happen as output scales up, industry sources note.</p>
<div class="lb-trans"><p>儘管採用了尖端工藝，三星在大規模生產前已能夠實現穩定的良率，行業消息人士指出，隨着產量的增加，預計還會有進一步的改進。</p>
</div><p>Samsung has also talked about power efficiency, noting that HBM4 is designed to maximize computing performance while reducing energy consumption, helping data centers lower electricity use and cooling costs.</p>
<div class="lb-trans"><p>三星還談到了能效，指出 HBM4 旨在最大化計算性能，同時降低能耗，幫助數據中心降低電力使用和冷卻成本。</p>
</div><p>The company also expects its HBM sales volume this year to more than triple from last year and has decided to install additional production lines at its Pyeongtaek Campus Line 4 to expand its capacity. The facility is expected to produce roughly 100,000 to 120,000 wafers every month, dedicated to 1c DRAM used in HBM4 products, industry sources added.</p>
<div class="lb-trans"><p>該公司還預計今年的 HBM 銷售量將比去年增長三倍以上，並決定在其平澤校園的 4 號生產線安裝額外的生產線以擴大產能。該設施預計每月將生產約 100,000 到 120,000 片用於 HBM4 產品的 1c DRAM，行業消息人士補充道。</p>
</div><p>Last year, Samsung had already built a monthly capacity of around 60,000 to 70,000 wafers for the 1c DRAM process.</p>
<div class="lb-trans"><p>去年，三星已經為 1c DRAM 工藝建立了每月約 60,000 到 70,000 片的產能。</p>
</div><p>With the planned expansion, the total 1c output planned for HBM4 could rise to about 200,000 wafers per month, accounting for roughly a quarter of Samsung’s total DRAM production capacity of approximately 780,000 wafers.</p>
<div class="lb-trans"><p>隨着計劃的擴張，HBM4 的總 1c 產量預計將增加到每月約 200,000 片，約佔三星總 DRAM 生產能力的四分之一，後者約為 780,000 片。</p>
</div><p>The HBM4 market is expected to be dominated by Samsung and SK hynix, with US-based Micron Technology already seen as out of the race. According to market tracker SemiAnalysis, SK hynix is expected to take about 70% of the HBM4 market, while Samsung will account for the remaining 30%.</p>
<div class="lb-trans"><p>HBM4 市場預計將由三星和 SK 海力士主導，而美國的美光科技已被視為出局。根據市場追蹤機構 SemiAnalysis，SK 海力士預計將佔據約 70% 的 HBM4 市場，而三星將佔據剩餘的 30%。</p>
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Samsung Electronics' HBM4 chip expected to begin shipping later this month

- 三星電子預計本月開始發貨下一代高帶寬內存 HBM4。  
- 該內存將供貨給 Nvidia，用於其下一代 AI 加速平台。  
- 三星的 HBM4 數據傳輸速度達 11.7 Gbps，顯著高於行業標準。

三星電子的 HBM4 芯片預計將在本月末開始出貨