<div id="readability-page-1">News: Microelectronics Infineon expands XHP 2 CoolSiC MOSFET power module portfolioInfineon Technologies AG of Munich, Germany has expanded its XHP 2 power module portfolio with new variants incorporating CoolSiC MOSFETs 2300V, designed for high-voltage power systems. The new 2300V-class devices support DC-link voltages of up to 1500V, addressing the industry trend toward higher system voltages. The modules are available in several variants, offering on-resistance (RDS(on)) values ranging from 1mΩ to 2mΩ and isolation voltages of 4kV or 6kV. By leveraging silicon carbide (SiC) technology, the devices reduce both switching and conduction losses compared to conventional silicon-based solutions. This enables inverters to achieve higher efficiency and power density, or to operate at higher switching frequencies to reduce harmonics and system size. The new XHP 2 CoolSiC MOSFET modules are well suited for renewable energy applications, including wind, photovoltaic and battery storage systems. <img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/may/gip-igbt-xhp2-aisic.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" width="1200" height="621" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/may/gip-igbt-xhp2-aisic.jpg"/>Picture: Infineon’s XHP 2 power module portfolio. Implemented in the XHP 2 package, the modules feature symmetrical switching behavior for easy paralleling in large power converters and offer a standardized platform that enables developers to balance efficiency and performance according to application requirements. All variants integrate Infineon’s proven .XT interconnection technology, enhancing reliability and extending operational lifetime. The modules are also available with a pre-applied thermal interface material, simplifying assembly while supporting consistent thermal performance. These characteristics translate into measurable system-level benefits, says Infineon. In a wind power demonstration system, a power density of 300kW/L was achieved, while tests in battery storage systems showed semiconductor losses of less than 0.7% of the output power. With this portfolio expansion, Infineon supports scalable solutions for next-generation high-voltage power systems across a wide range of renewable energy applications. The XHP 2 CoolSiC MOSFET modules with a 2300V rating, FF1000UXTR23T2M1, FF1300UXTR23T2M1, FF2000UXTR23T2M1, and FF1000UXTR23T2M1_B5, are available now from Infineon and its distribution partners. Infineon adds CoolSiC power modules using 3.3kV MOSFETs in XHP 2 package, targeting traction applicationsInfineonwww.infineon.com/products/ </div>

IFNNY

SOXL

SOXX

Infineon Technologies AG has expanded its XHP 2 power module portfolio with new 2300V CoolSiC MOSFETs designed for high-voltage power systems. These modules support DC-link voltages up to 1500V and offer on-resistance values from 1mΩ to 2mΩ. Leveraging silicon carbide technology, they enhance efficiency and power density, making them suitable for renewable energy applications like wind and battery storage systems. The new modules are available now, supporting scalable solutions for next-generation high-voltage power systems.