<div id="readability-page-1">News: Microelectronics NoMIS Power joins ARPA-E DC-GRIDS consortiumNoMIS Power Corp of Albany, NY, USA — which was spun off from State University of New York Polytechnic Institute (SUNY Poly) in 2020, and develops silicon carbide (SiC) technologies for medium- and high-voltage power conversion — is participating as an industry partner in a three-year, $2.5m project led by Michigan State University (with principal investgator Dr Omid Beik) to develop high-voltage SiC-based neutral point clamped power electronics building blocks (NPC-PEBBs) as vendor-agnostic, plug-and-play submodules for modular valves in multi-port multi-terminal HVDC (MT-HVDC) converters. The project was selected under the US Department of Energy’s Advanced Research Projects Agency–Energy (ARPA-E) program Disruptive DC Converters for Grid Resilient Infrastructure to Deliver Sustainable energy (DC-GRIDS) and will leverage NoMIS Power’s 3.3kV SiC MOSFET portfolio, including its upcoming 25mΩ 3.3kV device. The project consortium includes NoMIS Power, EPRI, OPAL-RT Technologies, GE Grid Solutions, the National Renewable Energy Laboratory (NREL), Salt River Project, and Minnesota Power. The DC-GRIDS program targets transformative HVDC technologies that could substantially expand US transmission capacity to support electrification, surging demand from data centers, and integration of resources such as offshore wind. MT-HVDC converters are the backbone of long-distance, high-capacity power transmission and the leading architecture for high-capacity data-center power delivery, cross-region grid links, and offshore wind interconnection. The NPC-PEBB submodules at the core of this project — rated 6.6kV/2.5kA — will be built using NoMIS Power’s US-designed 3.3kV SiC MOSFETs and power modules. The architecture is designed to capitalize directly on NoMIS’ expanding 3.3kV roadmap, anchored by the previously released NoMIS N3PT080MP330 (3.3kV, 80mΩ, 34A) and extending through the forthcoming 50mΩ and 25mΩ 3.3kV MOSFETs that will complete the suite. The 25mΩ 3.3kV device is expected to be a particularly strong fit for HVDC submodule applications, where the lowest possible on-resistance translates directly into reduced conduction losses, higher converter efficiency, and improved thermal headroom at MT-HVDC valve current levels. NoMIS Power will lead the program’s SiC device-level packaging, coordinating all packaging tasks and supporting NPC-PEBB assembly. NoMIS engineers will also lead electrical testing, screening and performance characterization of SiC devices and power modules feeding into NPC-PEBB assembly and demonstration. The work will be performed at NoMIS Power’s facility within the Albany Nanotech Complex in Albany, NY. The NPC-PEBB approach delivers a step-change over conventional silicon IGBT-based half-bridge submodules, including a 3-level 6.6kV output (versus 2-level 4.5kV), full DC fault current blocking, a 60% reduction in submodule capacitor size via an advanced multi-level space vector modulation strategy, and improved efficiency, power density and reliability across the valve and converter. Beyond this consortium, NoMIS Power’s 3.3kV SiC MOSFETs and power modules are available as supply to other DC-GRIDS teams, as well as to broader medium- and high-voltage power electronics developers. NoMIS supports evaluation, design-in, and custom packaging engagements, including guidance on transitioning from legacy IGBT-based platforms to SiC. “MT-HVDC is foundational to the future of the US grid, and our 3.3kV SiC portfolio — culminating with the upcoming 25mΩ device — is purpose-built for exactly this class of application,” says NoMIS Power’s co-founder &amp; CEO Dr Adam Morgan. “We’re proud to support Dr Beik and the Michigan State-led team with US-designed SiC MOSFETs, modules, and packaging expertise, and we welcome the opportunity to supply other DC-GRIDS teams advancing modular valves and converter substation technologies for multi-terminal HVDC.” NoMIS Power gains USAF award to develop SiC devices for aircraft electrical power systemsNoMIS Power partners with Hyundai to evaluate and develop high-voltage power semiconductor device designs and packagingNoMIS to provide SiC power semiconductor devices and modulesPower electronicswww.nomispower.com </div>

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NoMIS Power Corp has joined the ARPA-E DC-GRIDS consortium, participating in a $2.5 million project led by Michigan State University to develop high-voltage SiC-based power electronics. The project aims to enhance HVDC technologies for improved US transmission capacity, supporting electrification and offshore wind integration. NoMIS will leverage its 3.3kV SiC MOSFET portfolio, including a new 25mΩ device, to lead device-level packaging and testing within the Albany Nanotech Complex.