<p>日本川崎 --（商业资讯）-- 东芝电子设备与存储公司（&#34;东芝&#34;）今天开始发货 “TW007D120E” 的测试样品，这是一款 1200V 的沟槽栅 SiC MOSFET，主要用于下一代 AI 数据中心的电源系统，同时也适用于可再生能源相关设备。</p>
<p>本新闻稿包含多媒体内容。查看完整发布内容请点击这里：https://www.businesswire.com/news/home/20260520299135/en/</p>
<p>随着生成式 AI 的快速扩展，数据中心的电力消耗问题日益严重。特别是高功率 AI 服务器的广泛采用以及 800V 高压直流（HVDC）架构的日益部署，推动了对具有更高电源转换效率和功率密度的电源系统的需求。东芝通过开发 TW007D120E 来满足下一代 AI 数据中心的这些需求，这将有助于降低电力消耗，并实现电源系统的小型化和高效化。</p>
<p>TW007D120E 基于东芝专有的沟槽栅结构 [1]，实现了行业领先的单位面积低导通电阻（RDS(on) A）；它通过降低导通电阻来减少导通损耗，同时实现更低的开关损耗。与东芝现有产品相比，TW007D120E 的 RDS(on) A 降低了约 58%[3]，并且在导通损耗与开关损耗之间的权衡指标——导通电阻 × 栅极 - 漏极电荷（RDS(on) × Qgd）上改善了约 52%[3]。这些特性将有助于实现数据中心电源系统的高效运行和减少热量产生，从而提高整体系统效率。</p>
<p>新产品采用支持顶部冷却的 QDPAK 封装。这有助于在电源阶段实现更高的功率密度和增强的热性能，这对于下一代 AI 数据中心的电源转换至关重要。</p>
<p>东芝计划在 2026 财年准备 TW007D120E 的量产，并将继续扩展其产品线，包括汽车应用的开发。通过沟槽栅 SiC MOSFET，东芝将有助于提高数据中心和广泛工业设备的电力效率，减少 CO₂排放，支持实现脱碳社会。</p>
<p>TW007D120E 基于新兴能源和工业技术开发机构（NEDO）资助的项目 JPNP21029 的结果。</p>
<p>备注：</p>
<p>[1] 一种在半导体基板上形成细沟槽并将栅极电极嵌入沟槽内的器件结构。</p>
<p>[2] 东芝研究，截至 2026 年 5 月。</p>
<p>[3] 新开发的 1200V SiC MOSFET 与东芝第三代 SiC MOSFET（TW015Z120C）的比较。东芝研究，截至 2026 年 5 月。</p>
<p><strong>应用</strong></p>
<ul>
<li>数据中心电源（AC-DC，DC-DC）</li>
<li>光伏逆变器</li>
<li>不间断电源（UPS）</li>
<li>电动汽车充电站</li>
<li>能量存储系统</li>
<li>工业电动机</li>
</ul>
<p><strong>特点</strong></p>
<ul>
<li>低导通电阻和低 RDS(on) A</li>
<li>低开关损耗和低 RDS(on) × Qgd</li>
<li>低栅极驱动电压：VGS_ON=15V 至 18V</li>
<li>高热性能 QDPAK 封装</li>
</ul>
<p><strong>主要规格</strong></p>
<table>
<thead>
<tr>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
</tr>
</thead>
<tbody>
<tr>
<td>（除非另有说明，Tvj=25°C）</td>
<td></td>
<td></td>
<td></td>
<td></td>
</tr>
<tr>
<td>部件编号</td>
<td>TW007D120E</td>
<td></td>
<td></td>
<td></td>
</tr>
<tr>
<td>封装</td>
<td>名称</td>
<td>QDPAK</td>
<td></td>
<td></td>
</tr>
<tr>
<td>绝对最大额定值</td>
<td>漏极 - 源极电压 VDSS（V）</td>
<td>1200</td>
<td></td>
<td></td>
</tr>
<tr>
<td>漏电流（直流）ID（A）</td>
<td>Tc=25°C</td>
<td>172</td>
<td></td>
<td></td>
</tr>
<tr>
<td>电气特性</td>
<td>漏极 - 源极导通电阻 RDS(on)（mΩ）</td>
<td>VGS=15V</td>
<td>典型值</td>
<td>7.0</td>
</tr>
<tr>
<td>栅极阈值电压 Vth（V）</td>
<td>VDS=10V</td>
<td>3.0 至 5.0</td>
<td></td>
<td></td>
</tr>
<tr>
<td>总栅极电荷 Qg（nC）</td>
<td>VGS=15V</td>
<td>典型值</td>
<td>317</td>
<td></td>
</tr>
<tr>
<td>栅极 - 漏极电荷 Qgd（nC）</td>
<td>VGS=15V</td>
<td>典型值</td>
<td>33</td>
<td></td>
</tr>
<tr>
<td>输入电容 Ciss（pF）</td>
<td>VDS=800V</td>
<td>典型值</td>
<td>13972</td>
<td></td>
</tr>
<tr>
<td>二极管正向电压 VSD（V）</td>
<td>VGS=0V</td>
<td>典型值</td>
<td>3.2</td>
<td></td>
</tr>
<tr>
<td>注：开发中产品的规格和计划可能会在没有通知的情况下更改。</td>
<td></td>
<td></td>
<td></td>
<td></td>
</tr>
</tbody>
</table>
<p><strong>有关东芝 SiC 电源器件的更多信息，请访问以下链接。</strong> SiC 电源器件</p>
<p>* 公司名称、产品名称和服务名称可能是其各自公司的商标。</p>
<p>* 本文件中的信息，包括产品价格和规格、服务内容和联系信息，在公告日期是最新的，但可能会在没有事先通知的情况下更改。</p>
<p><strong>关于东芝电子设备与存储公司</strong></p>
<p>东芝电子设备与存储公司是一家领先的先进半导体和存储解决方案供应商，凭借超过半个世纪的经验和创新，为客户和商业伙伴提供卓越的分立半导体、系统 LSI 和 HDD 产品。</p>
<p>其全球 17400 名员工共同致力于最大化产品价值，并促进与客户的紧密合作，共同创造价值和新市场。公司期待为全球人民建设更美好的未来并做出贡献。</p>
<p>了解更多信息请访问 https://toshiba.semicon-storage.com/ap-en/top.html</p>
<p><img src="https://imageproxy.pbkrs.com/https://cts.businesswire.com/ct/CT/query-ZGlzdHJvPW54JmlkPWJ3bmV3cyZsYW5nPWVuJnNpZD1hY3FyOCZzdHk9MjAyNjA1MjAyOTkxMzVyMQ?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" alt="" original-src="https://imageproxy.pbkrs.com/https://cts.businesswire.com/ct/CT/query-ZGlzdHJvPW54JmlkPWJ3bmV3cyZsYW5nPWVuJnNpZD1hY3FyOCZzdHk9MjAyNjA1MjAyOTkxMzVyMQ"/></p>
<p>在 businesswire.com 上查看源版本：https://www.businesswire.com/news/home/20260520299135/en/</p>
<p>来源：东芝电子设备与存储公司</p>

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<p>东芝已开始发运其 1200V 沟槽栅 SiC MOSFET 的测试样品 TW007D120E，该产品专为下一代 AI 数据中心和可再生能源应用的电源系统设计。该新产品提高了电能转换效率，降低了功耗，与之前的型号相比，导通电阻减少了 58%。计划于 2026 财年开始量产，应用于数据中心、光伏逆变器和电动车充电站</p>

<p>KAWASAKI, Japan--(BUSINESS WIRE)-- Toshiba Electronic Devices &amp; Storage Corporation (&#34;Toshiba&#34;) today started shipping test samples of “TW007D120E,” a 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers that is also suitable for use in renewable energy-related equipment.</p>
<div class="lb-trans"><p>日本川崎 --（商业资讯）-- 东芝电子设备与存储公司（&#34;东芝&#34;）今天开始发货 “TW007D120E” 的测试样品，这是一款 1200V 的沟槽栅 SiC MOSFET，主要用于下一代 AI 数据中心的电源系统，同时也适用于可再生能源相关设备。</p>
</div><p>This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20260520299135/en/</p>
<div class="lb-trans"><p>本新闻稿包含多媒体内容。查看完整发布内容请点击这里：https://www.businesswire.com/news/home/20260520299135/en/</p>
</div><p>With the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. Toshiba has addressed these requirements for next-generation AI data centers by developing TW007D120E, which will contribute to lower power consumption and to the miniaturization and higher efficiency of power supply systems.</p>
<div class="lb-trans"><p>随着生成式 AI 的快速扩展，数据中心的电力消耗问题日益严重。特别是高功率 AI 服务器的广泛采用以及 800V 高压直流（HVDC）架构的日益部署，推动了对具有更高电源转换效率和功率密度的电源系统的需求。东芝通过开发 TW007D120E 来满足下一代 AI 数据中心的这些需求，这将有助于降低电力消耗，并实现电源系统的小型化和高效化。</p>
</div><p>TW007D120E is built around Toshiba’s proprietary trench-gate structure[1], which achieves industry-leading[2] low On-resistance per unit area (RDS(on) A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss. Compared with Toshiba’s current products, TW007D120E reduces RDS(on) A by approximately 58%[3] and improves the figure of merit, On-resistance × gate-drain charge (RDS(on) × Qgd), which represents the trade-off between conduction loss and switching loss, by approximately 52%[3]. These characteristics will help to realize highly efficient operation and reduced heat generation in data center power supply systems and contribute to improved overall system efficiency.</p>
<div class="lb-trans"><p>TW007D120E 基于东芝专有的沟槽栅结构 [1]，实现了行业领先的单位面积低导通电阻（RDS(on) A）；它通过降低导通电阻来减少导通损耗，同时实现更低的开关损耗。与东芝现有产品相比，TW007D120E 的 RDS(on) A 降低了约 58%[3]，并且在导通损耗与开关损耗之间的权衡指标——导通电阻 × 栅极 - 漏极电荷（RDS(on) × Qgd）上改善了约 52%[3]。这些特性将有助于实现数据中心电源系统的高效运行和减少热量产生，从而提高整体系统效率。</p>
</div><p>The new product is housed in a QDPAK package that supports top-side cooling. This contributes to both higher power density implementation and enhanced thermal performance in the power stage, which are essential for power conversion in next-generation AI data centers.</p>
<div class="lb-trans"><p>新产品采用支持顶部冷却的 QDPAK 封装。这有助于在电源阶段实现更高的功率密度和增强的热性能，这对于下一代 AI 数据中心的电源转换至关重要。</p>
</div><p>Toshiba will prepare for mass production of TW007D120E during fiscal year 2026 and will continue to expand its lineup, including development for automotive applications. Through the trench-gate SiC MOSFET, the company will contribute to improved power efficiency and reduced CO₂ emissions in data centers and a wide range of industrial equipment, supporting the realization of a decarbonized society.</p>
<div class="lb-trans"><p>东芝计划在 2026 财年准备 TW007D120E 的量产，并将继续扩展其产品线，包括汽车应用的开发。通过沟槽栅 SiC MOSFET，东芝将有助于提高数据中心和广泛工业设备的电力效率，减少 CO₂排放，支持实现脱碳社会。</p>
</div><p>TW007D120E is based on results obtained from JPNP21029, a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).</p>
<div class="lb-trans"><p>TW007D120E 基于新兴能源和工业技术开发机构（NEDO）资助的项目 JPNP21029 的结果。</p>
</div><p>Notes:</p>
<div class="lb-trans"><p>备注：</p>
</div><p>[1] A device structure in which fine trenches are formed in the semiconductor substrate and gate electrodes are embedded within the trenches.</p>
<div class="lb-trans"><p>[1] 一种在半导体基板上形成细沟槽并将栅极电极嵌入沟槽内的器件结构。</p>
</div><p>[2] Toshiba research, as of May 2026.</p>
<div class="lb-trans"><p>[2] 东芝研究，截至 2026 年 5 月。</p>
</div><p>[3] Comparison of the newly developed 1200V SiC MOSFET with Toshiba’s 3rd-generation SiC MOSFET (TW015Z120C). Toshiba research, as of May 2026.</p>
<div class="lb-trans"><p>[3] 新开发的 1200V SiC MOSFET 与东芝第三代 SiC MOSFET（TW015Z120C）的比较。东芝研究，截至 2026 年 5 月。</p>
</div><p><strong>Applications</strong></p>
<div class="lb-trans"><p><strong>应用</strong></p>
</div><ul>
<li>Power supplies for data centers (AC-DC, DC-DC)</li>
<li>Photovoltaic inverters</li>
<li>Uninterruptible power supply (UPS)</li>
<li>EV charging stations</li>
<li>Energy storage systems</li>
<li>Industrial motors</li>
</ul>
<div class="lb-trans"><ul>
<li>数据中心电源（AC-DC，DC-DC）</li>
<li>光伏逆变器</li>
<li>不间断电源（UPS）</li>
<li>电动汽车充电站</li>
<li>能量存储系统</li>
<li>工业电动机</li>
</ul>
</div><p><strong>Features</strong></p>
<div class="lb-trans"><p><strong>特点</strong></p>
</div><ul>
<li>Low On-resistance and low RDS(on) A</li>
<li>Low switching loss and low RDS(on) × Qgd</li>
<li>Low gate drive voltage: VGS_ON=15V to 18V</li>
<li>High thermal performance QDPAK package</li>
</ul>
<div class="lb-trans"><ul>
<li>低导通电阻和低 RDS(on) A</li>
<li>低开关损耗和低 RDS(on) × Qgd</li>
<li>低栅极驱动电压：VGS_ON=15V 至 18V</li>
<li>高热性能 QDPAK 封装</li>
</ul>
</div><p><strong>Main Specifications</strong></p>
<div class="lb-trans"><p><strong>主要规格</strong></p>
</div><table>
<thead>
<tr>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
</tr>
</thead>
<tbody>
<tr>
<td>(Unless otherwise specified, Tvj=25°C)</td>
<td></td>
<td></td>
<td></td>
<td></td>
</tr>
<tr>
<td>Part number</td>
<td>TW007D120E</td>
<td></td>
<td></td>
<td></td>
</tr>
<tr>
<td>Package</td>
<td>Name</td>
<td>QDPAK</td>
<td></td>
<td></td>
</tr>
<tr>
<td>Absolute maximum ratings</td>
<td>Drain-source voltage VDSS (V)</td>
<td>1200</td>
<td></td>
<td></td>
</tr>
<tr>
<td>Drain current (DC) ID (A)</td>
<td>Tc=25°C</td>
<td>172</td>
<td></td>
<td></td>
</tr>
<tr>
<td>Electrical characteristics</td>
<td>Drain-source On-resistance RDS(on) (mΩ)</td>
<td>VGS=15V</td>
<td>Typ.</td>
<td>7.0</td>
</tr>
<tr>
<td>Gate threshold voltage Vth (V)</td>
<td>VDS=10V</td>
<td>3.0 to 5.0</td>
<td></td>
<td></td>
</tr>
<tr>
<td>Total gate charge Qg (nC)</td>
<td>VGS=15V</td>
<td>Typ.</td>
<td>317</td>
<td></td>
</tr>
<tr>
<td>Gate-drain charge Qgd (nC)</td>
<td>VGS=15V</td>
<td>Typ.</td>
<td>33</td>
<td></td>
</tr>
<tr>
<td>Input capacitance Ciss (pF)</td>
<td>VDS=800V</td>
<td>Typ.</td>
<td>13972</td>
<td></td>
</tr>
<tr>
<td>Diode forward voltage VSD (V)</td>
<td>VGS=0V</td>
<td>Typ.</td>
<td>3.2</td>
<td></td>
</tr>
<tr>
<td>Note: Specifications and schedules for products under development are subject to change without notice.</td>
<td></td>
<td></td>
<td></td>
<td></td>
</tr>
</tbody>
</table>
<div class="lb-trans"><table>
<thead>
<tr>
<th></th>
<th></th>
<th></th>
<th></th>
<th></th>
</tr>
</thead>
<tbody>
<tr>
<td>（除非另有说明，Tvj=25°C）</td>
<td></td>
<td></td>
<td></td>
<td></td>
</tr>
<tr>
<td>部件编号</td>
<td>TW007D120E</td>
<td></td>
<td></td>
<td></td>
</tr>
<tr>
<td>封装</td>
<td>名称</td>
<td>QDPAK</td>
<td></td>
<td></td>
</tr>
<tr>
<td>绝对最大额定值</td>
<td>漏极 - 源极电压 VDSS（V）</td>
<td>1200</td>
<td></td>
<td></td>
</tr>
<tr>
<td>漏电流（直流）ID（A）</td>
<td>Tc=25°C</td>
<td>172</td>
<td></td>
<td></td>
</tr>
<tr>
<td>电气特性</td>
<td>漏极 - 源极导通电阻 RDS(on)（mΩ）</td>
<td>VGS=15V</td>
<td>典型值</td>
<td>7.0</td>
</tr>
<tr>
<td>栅极阈值电压 Vth（V）</td>
<td>VDS=10V</td>
<td>3.0 至 5.0</td>
<td></td>
<td></td>
</tr>
<tr>
<td>总栅极电荷 Qg（nC）</td>
<td>VGS=15V</td>
<td>典型值</td>
<td>317</td>
<td></td>
</tr>
<tr>
<td>栅极 - 漏极电荷 Qgd（nC）</td>
<td>VGS=15V</td>
<td>典型值</td>
<td>33</td>
<td></td>
</tr>
<tr>
<td>输入电容 Ciss（pF）</td>
<td>VDS=800V</td>
<td>典型值</td>
<td>13972</td>
<td></td>
</tr>
<tr>
<td>二极管正向电压 VSD（V）</td>
<td>VGS=0V</td>
<td>典型值</td>
<td>3.2</td>
<td></td>
</tr>
<tr>
<td>注：开发中产品的规格和计划可能会在没有通知的情况下更改。</td>
<td></td>
<td></td>
<td></td>
<td></td>
</tr>
</tbody>
</table>
</div><p><strong>Follow the link below for more on Toshiba’s SiC Power Devices.</strong> SiC Power Devices</p>
<div class="lb-trans"><p><strong>有关东芝 SiC 电源器件的更多信息，请访问以下链接。</strong> SiC 电源器件</p>
</div><p>* Company names, product names, and service names may be trademarks of their respective companies.</p>
<div class="lb-trans"><p>* 公司名称、产品名称和服务名称可能是其各自公司的商标。</p>
</div><p>* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.</p>
<div class="lb-trans"><p>* 本文件中的信息，包括产品价格和规格、服务内容和联系信息，在公告日期是最新的，但可能会在没有事先通知的情况下更改。</p>
</div><p><strong>About Toshiba Electronic Devices &amp; Storage Corporation</strong></p>
<div class="lb-trans"><p><strong>关于东芝电子设备与存储公司</strong></p>
</div><p>Toshiba Electronic Devices &amp; Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.</p>
<div class="lb-trans"><p>东芝电子设备与存储公司是一家领先的先进半导体和存储解决方案供应商，凭借超过半个世纪的经验和创新，为客户和商业伙伴提供卓越的分立半导体、系统 LSI 和 HDD 产品。</p>
</div><p>Its 17,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.</p>
<div class="lb-trans"><p>其全球 17400 名员工共同致力于最大化产品价值，并促进与客户的紧密合作，共同创造价值和新市场。公司期待为全球人民建设更美好的未来并做出贡献。</p>
</div><p>Find out more at https://toshiba.semicon-storage.com/ap-en/top.html</p>
<div class="lb-trans"><p>了解更多信息请访问 https://toshiba.semicon-storage.com/ap-en/top.html</p>
</div><p><img src="https://imageproxy.pbkrs.com/https://cts.businesswire.com/ct/CT/query-ZGlzdHJvPW54JmlkPWJ3bmV3cyZsYW5nPWVuJnNpZD1hY3FyOCZzdHk9MjAyNjA1MjAyOTkxMzVyMQ" alt="" original-src="https://cts.businesswire.com/ct/CT?id=bwnews&amp;sty=20260520299135r1&amp;sid=acqr8&amp;distro=nx&amp;lang=en"/></p>
<p>View source version on businesswire.com: https://www.businesswire.com/news/home/20260520299135/en/</p>
<div class="lb-trans"><p>在 businesswire.com 上查看源版本：https://www.businesswire.com/news/home/20260520299135/en/</p>
</div><p>Source: Toshiba Electronic Devices &amp; Storage Corporation</p>
<div class="lb-trans"><p>来源：东芝电子设备与存储公司</p>
</div>

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