SK Hynix plans to tap TSMC for 3nm production of its base-die chip for next-gen HBM4E memory chips to gain a performance edge over Samsung, media report, adding SK Hynix will use its 10nm-class 6th generation (1c) DRAM production process for the DRAM stacked in HBM4E. Its HBM4 chips, to be used with Nvidia’s Rubin GPUs, are made on its 5th generation 10nm-class process, and use a base-die made on TSMC’s 12nm. $Taiwan Semiconductor(TSM.US) $HXSCL $NVIDIA(NVDA.US) $Micron Tech(MU.US) #SKhynix #Samsung #semiconductors

Source: Dan Nystedt