Samsung Electronics has started shipping next-gen HBM4e memory chip samples to clients, media report, 12-layer high-bandwidth memory 4e. The new chip offers more than a 20% speed increase over HBM4, was made using Samsung’s 1c DRAM manufacturing technology, and holds a logic base-die made with Samsung Foundry 4nm. $HXSCL $SSNLF $Micron Tech(MU.US) #Samsung #SKhynix #semiconductors #HBM
Source: Dan Nystedt
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